S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO_2/Al_2O_3 nanolaminates

F. S. Aguirre-Tostado; M. Milojevic; K. J. Choi; H. C. Kim; C. L. Hinkle; E. M. Vogel; J. Kim; T. Yang; Y. Xuan; P. D. Ye; R. M. Wallace

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S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO_2/Al_2O_3 nanolaminates

机译：HfO_2 / Al_2O_3纳米层合物原子层沉积时GaAs的S钝化和能带弯曲的减少

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A systematic study of the interface engineering and dielectric properties of nanolaminated hafnium aluminate on GaAs is presented. The dielectrics were deposited using atomic layer deposition of alternating cycles of HfO_2 and Al_2O_3 on GaAs substrates. High resolution x-ray photoelectron spectroscopy (XPS) showed differences in space charge amounts at the interface for the two surface treatments [NH_4OH or (NH_4)_2S]. In-situ XPS analysis shows that chemical bonding to oxygen across the nanolaminate film is independent of the interface formation conditions. In addition, the GaAs surface treated with (NH_4)_2S shows a decreased band bending and slightly thinner films with respect to NH_4OH.

机译：提出了在GaAs上纳米叠层铝酸铝的界面工程和介电性能的系统研究。在GaAs衬底上使用HfO_2和Al_2O_3交替循环的原子层沉积法沉积电介质。高分辨率X射线光电子能谱（XPS）显示两种表面处理[NH_4OH或（NH_4）_2S]界面处的空间电荷量不同。 XPS原位分析表明，跨纳米层压膜与氧的化学键独立于界面形成条件。另外，相对于NH_4OH，经（NH_4）_2S处理的GaAs表面显示出减小的带弯曲并且膜稍薄。

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来源
《Applied Physicsletters》 |2008年第6期|66-68|共3页
作者
F. S. Aguirre-Tostado; M. Milojevic; K. J. Choi; H. C. Kim; C. L. Hinkle; E. M. Vogel; J. Kim; T. Yang; Y. Xuan; P. D. Ye; R. M. Wallace;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Interface studies of GaAs metal-oxide-semiconductor structures using atomic-layer-deposited HfO_2/Al_2O_3 nanolaminate gate dielectric [J] . T. Yang, Y. Xuan, D. Zemlyanov, Applied Physics Letters . 2007,第14期

机译：利用原子层沉积的HfO_2 / Al_2O_3纳米层栅电介质对GaAs金属氧化物半导体结构进行界面研究
2. Modeling the breakdown statistics of Al_2O_3/HfO_2 nanolaminates grown by atomic-layer-deposition [J] . A. Conde, C. Martinez, D. Jimenez, Solid-State Electronics . 2012,第期

机译：模拟通过原子层沉积法生长的Al_2O_3 / HfO_2纳米层压板的击穿统计
3. Interface effect on dielectric constant of HfO_2/Al_2O_3 nanolaminate films deposited by plasma-enhanced atomic layer deposition [J] . Pan Kwi Park, Eun-Soo Cha, Sang-Won Kang Applied Physics Letters . 2007,第23期

机译：界面对等离子体增强原子层沉积HfO_2 / Al_2O_3纳米层合薄膜介电常数的影响
4. The NH_3 nitridation effects on a Al_2O_3 passivation by atomic layer deposition (ALD) in the HfO_2/GaAs systems [C] . Young Dae Cho, Dong Chan Suh, Dae-Hong Ko, Physics and technology of high-k materials 9 . 2011

机译：HfO_2 / GaAs体系中的原子层沉积（ALD）NH_3氮化对Al_2O_3钝化的影响
5. Structure and low-temperature tribology of lubricious nanocrystalline zinc oxide/aluminium oxide nanolaminates and zirconium dioxide monofilms grown by atomic layer deposition. [D] . Romanes, Maia Castillo. 2008

机译：通过原子层沉积法生长的润滑性纳米晶状氧化锌/氧化铝纳米层压板和二氧化锆单膜的结构和低温摩擦学。
6. In Situ SiO2 Passivation of Epitaxial (100)and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process [O] . Mantu K. Hudait, *, Michael B. Clavel, 2018

机译：外延原位SiO2钝化（100）利用TaSiOx原子层沉积工艺制备和（110）InGaAs
7. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO2/Al2O3 nanolaminates [O] . F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, 2008

机译：HFO2 / Al2O3纳米胺原子层沉积对GaAs和带弯曲的钝化
8. Fabrication of Nanolaminates with Ultrathin Nanolayers Using Atomic Layer Deposition: Nucleation & Growth Issues [R] . George, S. M. 2009

机译：用原子层沉积法制备具有超薄纳米层的纳米层：成核和生长问题

S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO_2/Al_2O_3 nanolaminates

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