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The NH_3 nitridation effects on a Al_2O_3 passivation by atomic layer deposition (ALD) in the HfO_2/GaAs systems

机译：HfO_2 / GaAs体系中的原子层沉积（ALD）NH_3氮化对Al_2O_3钝化的影响

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We investigated the nitridation effects on a passivating Al_2O_3 layer formed by atomic layer deposition (ALD) process at the interface of HfO_2/GaAs. Results reveal that formation of Ga-O is suppressed greatly when annealed under NH_3 ambient for the HfO_2/GaAs system. Moreover if the Al_2O_3 layer is thick enough, diffusion of Ga into the high-k dielectric is blocked effectively, even after heat treatment at 500℃. Results of chemical analyses by x-ray photoelectron spectroscopy (XPS) and micro-structure analyses by high-resolution transmission electron microscopy (HR-TEM) are presented.

机译：我们研究了在HfO_2 / GaAs界面上通过原子层沉积（ALD）工艺形成的钝化Al_2O_3层的氮化作用。结果表明，HfO_2 / GaAs体系在NH_3环境下退火时，Ga-O的形成得到了极大的抑制。此外，如果Al_2O_3层足够厚，即使经过500℃的热处理，也可以有效地阻止Ga扩散到高k电介质中。介绍了通过X射线光电子能谱（XPS）进行的化学分析结果以及通过高分辨率透射电子显微镜（HR-TEM）进行的微结构分析结果。

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《Physics and technology of high-k materials 9》|2011年|p.145-148|共4页
会议地点 Boston MA(US);Boston MA(US)
作者
Young Dae Cho; Dong Chan Suh; Dae-Hong Ko; Yongshik Lee; Mann-Ho Cho;
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Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Korea;

Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Korea, Samsung Electronics Limited, Gyeonggi-do 445-701, Korea;

Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Korea;

Department of Electrical and Electronics Engineering, Yonsei University, Seoul 120- 749, Korea;

Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea;

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1. S passivation of GaAs and band bending reduction upon atomic layer deposition of HfO_2/Al_2O_3 nanolaminates [J] . F. S. Aguirre-Tostado, M. Milojevic, K. J. Choi, Applied Physicsletters . 2008,第6期

机译：HfO_2 / Al_2O_3纳米层合物原子层沉积时GaAs的S钝化和能带弯曲的减少
2. Nitridation of atomic-layer-deposited HfO_2/Al_2O_3 stacks by NH_3 annealing [J] . Jian-Shuang Liu, Yang Geng, Lin Chen, Thin Solid Films . 2013,第FEBa1期

机译：NH_3退火氮化原子层沉积的HfO_2 / Al_2O_3堆
3. Comparison of HfAlO, HfO_2/Al_2O_3, and HfO_2 on n-type GaAs using atomic layer deposition [J] . Bin Lu, Hongliang Lv, Yuming Zhang, Superlattices and microstructures . 2016,第nova期

机译：使用原子层沉积法比较n型GaAs上的HfAlO，HfO_2 / Al_2O_3和HfO_2
4. The NH_3 nitridation effects on a Al_2O_3 passivation by atomic layer deposition (ALD) in the HfO_2/GaAs systems [C] . Young Dae Cho, Dong Chan Suh, Dae-Hong Ko, International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice . 2011

机译：HFO_2 / GaAs系统中原子层沉积（ALD）对AL_2O_3钝化的NH_3氮化效应
5. Molecular engineering for thin-film applications: Area-selective atomic layer deposition (ALD) and molecular-atomic layer deposition (MALD). [D] . Huang, Jie. 2014

机译：薄膜应用的分子工程：区域选择性原子层沉积（ALD）和分子原子层沉积（MALD）。
6. In Situ SiO2 Passivation of Epitaxial (100)and (110)InGaAs by Exploiting TaSiOx Atomic Layer Deposition Process [O] . Mantu K. Hudait, *, Michael B. Clavel, 2018

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7. Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al2O3 gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system [O] . Takeshi Aoki, Noboru Fukuhara, Takenori Osada, 2015

机译：使用金属有机气相沉积/原子层沉积混合系统原位制造的包含al2O3栅极氧化物和alN钝化层的Gaas金属氧化物半导体结构的电特性

The NH_3 nitridation effects on a Al_2O_3 passivation by atomic layer deposition (ALD) in the HfO_2/GaAs systems

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