Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

A. Fissel; D. Kuehne; E. Bugiel; H. J. Osten

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Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

机译：固-气相合作外延：一种制造单晶绝缘体/硅/绝缘体纳米结构的方法

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We study the growth of insulator/Si/insulator nanostructures on Si(111) using molecular beam epitaxy. Based on different investigations, we develop an approach for the fabrication of a nanostructure with a continuous ultrathin single-crystalline silicon buried in a single-crystalline insulator matrix with sharp interfaces. This approach is based on an epitaxial encapsulated solid-phase epitaxy, in which the solid-phase epitaxy of silicon is accompanied by a vapor-phase epitaxy of the second insulator layer. We call this approach as cooperative solid-vapor-phase epitaxy. As an example we demonstrate the growth of buried epitaxial silicon in epitaxial Gd_2O_3.

机译：我们使用分子束外延研究了Si（111）上绝缘子/ Si /绝缘子纳米结构的生长。基于不同的研究，我们开发了一种制造具有连续超薄单晶硅的纳米结构的方法，该单晶硅埋在具有尖锐界面的单晶绝缘体矩阵中。该方法基于外延封装的固相外延，其中硅的固相外延伴随着第二绝缘体层的气相外延。我们称这种方法为合作固相气相外延。作为示例，我们证明了外延Gd_2O_3中埋入的外延硅的生长。

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来源
《Applied Physics Letters》 |2006年第15期|p.153105.1-153105.3|共3页
作者
A. Fissel; D. Kuehne; E. Bugiel; H. J. Osten;
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Information Technology Laboratory, University of Hannover, Schneiderberg 32, D-30167 Hannover, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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专利

1. Fabrication of single-crystalline insulator/Si/insulator double-barrier nanostructure using cooperative vapor-solid-phase epitaxy [J] . Osten HJ, Kuehne D, Bugiel E, Physica, E. Low-dimensional systems & nanostructures . 2007,第1a2期

机译：气相-固相外延法制备单晶绝缘子/硅/绝缘子双势垒纳米结构
2. Fabrication of single-crystalline insulator/Si/insulator nanostructures [J] . Fissel A, Kuhne D, Bugiel E, Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures . 2006,第4期

机译：单晶绝缘体/硅/绝缘体纳米结构的制备
3. Fabrication of a Nanoscale Single-Crystalline Silicon Thin Film on Insulator [J] . T.-H. Lee, C.-H. Huang, Y.-Y. Yang Electrochemical and solid-state letters . 2007,第7期

机译：绝缘子上纳米级单晶硅薄膜的制备
4. Fabrication of germanium-on-insulator (GOI) with improved threading dislocation density (TDD) via buffer-less epitaxy and bonding [C] . Lee Kwang Hong, Bao Shuyu, Chong Gang Yih, 2014 7th International Silicon‐Germanium Technology and Device Meeting . 2014

机译：通过无缓冲外延和键合制造具有改善的线错位密度（TDD）的绝缘体上锗（GOI）
5. Development of a process flow for self -aligned double -gate MOSFET by tunnel epitaxy using nitrided thermal oxide as gate insulators. [D] . Ahmed, Shibly Sadique. 2001

机译：通过隧道外延，使用氮化的热氧化物作为栅绝缘体，开发自对准双栅MOSFET的工艺流程。
6. Fabrication and characterization of nanostructures on insulator substrates by electron-beam-induced deposition [O] . Minghui Song, Kazuo Furuya 2008

机译：通过电子束诱导沉积在绝缘体基底上制备和表征纳米结构
7. The van der Waals epitaxy of Bi 2Se 3 on the vicinal Si(111) surface: An approach for preparing high-quality thin films of a topological insulator [O] . Wang N, Wang ZY, Kan X, 2010

机译：邻近si（111）表面上的Bi 2 se 3的范德华外延：制备拓扑绝缘体的高质量薄膜的方法
8. Lateral Epitaxy by Seeded Solidification for Growth of Single-Crystal Si Films on Insulators [R] . Fan, J. C., Geis, M. W., Tsaur, B. Y. 1980

机译：种子凝固外延生长在绝缘子上的单晶硅薄膜生长

Cooperative solid-vapor-phase epitaxy: An approach for fabrication of single-crystalline insulator/Si/insulator nanostructures

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