Near-field optical photolithography for high-aspect-ratio patterning using bilayer resist

M. Naya; I. Tsuruma; T. Tani; A. Mukai; S. Sakaguchi; S. Yasunami

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Near-field optical photolithography for high-aspect-ratio patterning using bilayer resist

机译：使用双层抗蚀剂的高倍率构图的近场光学光刻

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We attempted to achieve a sufficiently large high-aspect-ratio patterning in near-field optical photolithography employing a bilayer resist process. In this experiment, we formed a resist pattern with a linewidth of 130 nm and a depth of 550 nm. This suggests that a practical method of near-field optical photolithography should become available. We also studied the dependency of an optical pattern on resist film thickness by the three-dimentional finite-difference time-domain method. The calculation results suggest that the resist film thickness affects the distribution of light in the resist.

机译：我们试图在采用双层抗蚀剂工艺的近场光学光刻中实现足够大的高纵横比图案化。在该实验中，我们形成了线宽为130 nm，深度为550 nm的抗蚀剂图案。这表明应提供一种实用的近场光学光刻方法。我们还通过三维有限差分时域方法研究了光学图案对抗蚀剂膜厚度的依赖性。计算结果表明，抗蚀剂膜的厚度影响光在抗蚀剂中的分布。

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《Applied Physics Letters》 |2005年第20期|p.201113.1-201113.3|共3页
作者
M. Naya; I. Tsuruma; T. Tani; A. Mukai; S. Sakaguchi; S. Yasunami;
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作者单位

Advanced Core Technology Laboratories, Research and Development Management Headquarters, Fuji Photo Film Co., Ltd., 798, Miyanodai, Kaisei-machi, Ashigarakami-gun, Kanagawa 258-8538, Japan;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;
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2. Formation of Thick High-Aspect-Ratio Resistive Masks by the Contact Photolithography Method [J] . A. N. Gentselev, F. N. Dul’tsev, V. I. Kondrat’ev, Optoelectronics, Instrumentation and Data Processing . 2018,第2期

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Near-field optical photolithography for high-aspect-ratio patterning using bilayer resist

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