High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

Lichtenwalner Daniel J.; Cheng Lin; Dhar Sarit; Agarwal Anant; Palmour John W.

首页> 外文期刊>Applied Physics Letters >High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

【24h】

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

机译：使用碱金属和碱土金属界面层的高迁移率4H-SiC（0001）晶体管

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Alkali (Rb and Cs) and alkaline earth (Ca, Sr, and Ba) elements have been investigated as interface passivation materials for metal-oxide-semiconductor field-effect transistors (MOSFETs) on 4H-SiC (0001). While the alkali elements Rb and Cs result in field-effect mobility (μ) values > 25 cm/V·s, the alkaline earth elements Sr and Ba resulted in higher μ values of 40 and 85 cm/V·s, respectively. The Ba-modified MOSFETs show a slight decrease in mobility with heating to 150 °C, as expected when mobility is not interface-trap-limited, but phonon-scattering-limited. With a Ba interface layer, the interface state density 0.25 eV below the conduction band is ∼3 × 10cm eV, lower than that obtained with nitric oxide passivation. Devices show stable threshold voltage under 2 MV/cm gate bias stress at 175 °C, indicating no mobile ions. Secondary-ion mass spectrometry shows that the Sr and Ba stay predominantly at the interface after oxidation anneals.

机译：已经研究了碱（Rb和Cs）和碱土金属（Ca，Sr和Ba）元素作为4H-SiC（0001）上的金属氧化物半导体场效应晶体管（MOSFET）的界面钝化材料。碱金属元素Rb和Cs的场效应迁移率（μ）值> 25 cm / V·s，而碱土金属元素Sr和Ba的较高μ值分别为40和85 cm / V·s。如迁移率不受界面陷阱限制，但受声子散射限制，Ba改性的MOSFET在加热至150 C时，迁移率会略有下降。对于Ba界面层，在导带以下0.25 eV的界面态密度约为3×10cm eV，低于一氧化氮钝化所获得的界面态密度。器件在175 C的2 MV / cm的栅极偏置应力下显示稳定的阈值电压，表明没有移动离子。二次离子质谱表明，Sr和Ba在氧化退火后主要停留在界面上。

著录项

来源
《Applied Physics Letters》 |2014年第18期|1-4|共4页
作者
Lichtenwalner Daniel J.; Cheng Lin; Dhar Sarit; Agarwal Anant; Palmour John W.;
展开▼
作者单位

Cree, Inc., Durham, North Carolina 27709, USA;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers [J] . Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Applied Physics Letters . 2014,第18期

机译：使用碱金属和碱土金属界面层的高迁移率4H-SiC（0001）晶体管
2. Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors [J] . Patrick WALTEREIT, Christiane POBLENZ, Siddharth RAJAN, Japanese Journal of Applied Physics. Part 2, Letters . 2004,第12A期

机译：等离子体辅助分子束外延生长高电子迁移率晶体管的4H-SiC（0001）上GaN缓冲层的结构特性
3. Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal [J] . Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Materials science forum . 2017,第期

机译：碱土金属对4H-SiC（0001）衬底的增强氧化和界面改性
4. Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal [C] . Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, 2016 European Conference on Silicon Carbide amp; Related Materials . 2016

机译：碱土金属在4H-SiC（0001）衬底上的增强氧化和界面改性
5. Applied Experimental Surface Chemistry at Solid-Liquid and Solid-Gas Interface: A UHV Study of Carbon Dioxide Sorption on Single and Composite Alkali and Alkaline Earth Metal (potassium modified magnesia) Films and Using Zeta Potential to Probe Surface Reaction Kinetics and Equilibrium on Mineral Surfaces in Liquid Media: Measurements, Modeling and Parameter Estimation. [D] . Faruqui, Danish. 2010

机译：在固-液和固-气界面的应用实验表面化学：在单层和复合碱和碱土金属（钾改性氧化镁）膜上二氧化碳吸附的超高压研究，并利用Zeta电位探测矿物表面的表面反应动力学和平衡在液体介质中：测量，建模和参数估计。
6. High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen [O] . E. Pallecchi, F. Lafont, V. Cavaliere, -1

机译：氢气下生长后退火在4H-SiC（0001）上外延石墨烯中的高电子迁移率
7. Field-Effect Transistors: Monolayer Hexagonal Boron Nitride Films with Large Domain Size and Clean Interface for Enhancing the Mobility of Graphene-Based Field-Effect Transistors (Adv. Mater. 10/2014) [O] . Lifeng Wang, Bin Wu, Jisi Chen, 2014

机译：场效应晶体管：单层六边形氮化硼膜，具有大畴尺寸和清洁界面，用于增强基于石墨烯的场效应晶体管的迁移率（ADV。Mater。10/2014）

High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers

摘要

著录项

相似文献

相关主题

期刊订阅