Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal

机译：碱土金属在4H-SiC（0001）衬底上的增强氧化和界面改性

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Summary form only given. The complete presentation was not made available for publication as part of the conference proceedings. Enhanced-oxidation of 4H-SiC and interface modification with BaO2 was investigated. The enhanced oxidation of 4H-SiC was drastically dependent on pre-deposited BaO2 thickness. At the oxidation time of 300 min, oxide thicknesses for BaO2 of 2.8 nm and 7.8 nm were 91.8 nm and 26.2 nm, respectively. The physical state of Ba in the oxide was investigated by XPS and 2D-GIXD. At thick BaO2 with a thickness of over 6.4 nm, bridged oxygen and non-bridged oxygen were observed in O1s state. This results shows barium silicate was formed in SiO2 at BaO2 thickness of over 6.4 nm.

机译：仅提供摘要表格。完整的演示文稿未作为会议记录的一部分公开发布。研究了4H-SiC的增强氧化和BaO2的界面改性。 4H-SiC的增强氧化极大地取决于预沉积的BaO2厚度。在300分钟的氧化时间下，BaO2的2.8 nm和7.8 nm的氧化物厚度分别为91.8 nm和26.2 nm。通过XPS和2D-GIXD研究了氧化物中Ba的物理状态。在厚度超过6.4 nm的厚BaO2处，在O1s状态下观察到桥接氧和非桥接氧。该结果表明在SiO 2中以超过6.4nm的BaO 2厚度形成了硅酸钡。

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来源
《2016 European Conference on Silicon Carbide amp; Related Materials》|2016年|1-1|共1页
会议地点 Halkidiki(GR)
作者
Kosuke Muraoka; Hiroshi Sezaki; Seiji Ishikawa; Tomonori Maeda; Tadashi Sato; Takamaro Kikkawa; Shin-Ichiro Kuroki;
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作者单位

Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima, 739-8527, Japan;

Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima, 739-8527, Japan;

Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima, 739-8527, Japan;

Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima, 739-8527, Japan;

Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima, 739-8527, Japan;

Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima, 739-8527, Japan;

Research Institute for Nanodevice and Bio Systems, Hiroshima University, 1-4-2 Kagamiyama, Higashihiroshima, Hiroshima, 739-8527, Japan;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Barium; Silicon carbide; MOSFET; Substrates; MOS capacitors; Oxidation;

机译：钡;碳化硅; MOSFET;基板; MOS电容器;氧化;

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专利

1. Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal [J] . Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, Materials science forum . 2017,第期

机译：碱土金属对4H-SiC（0001）衬底的增强氧化和界面改性
2. High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers [J] . Lichtenwalner Daniel J., Cheng Lin, Dhar Sarit, Applied Physics Letters . 2014,第18期

机译：使用碱金属和碱土金属界面层的高迁移率4H-SiC（0001）晶体管
3. High mobility 4H-SiC (0001) transistors using alkali and alkaline earth interface layers [J] . Daniel J. Lichtenwalner, Lin Cheng, Sarit Dhar, Applied Physics Letters . 2014,第18期

机译：使用碱金属和碱土金属界面层的高迁移率4H-SiC（0001）晶体管
4. Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal [C] . Kosuke Muraoka, Hiroshi Sezaki, Seiji Ishikawa, European Conference on Silicon Carbide Related Materials . 2016

机译：使用碱土金属的4H-SiC（0001）衬底的增强氧化和界面改性
5. Applied Experimental Surface Chemistry at Solid-Liquid and Solid-Gas Interface: A UHV Study of Carbon Dioxide Sorption on Single and Composite Alkali and Alkaline Earth Metal (potassium modified magnesia) Films and Using Zeta Potential to Probe Surface Reaction Kinetics and Equilibrium on Mineral Surfaces in Liquid Media: Measurements, Modeling and Parameter Estimation. [D] . Faruqui, Danish. 2010

机译：在固-液和固-气界面的应用实验表面化学：在单层和复合碱和碱土金属（钾改性氧化镁）膜上二氧化碳吸附的超高压研究，并利用Zeta电位探测矿物表面的表面反应动力学和平衡在液体介质中：测量，建模和参数估计。
6. Origin of low sodium capacity in graphite and generally weak substrate binding of Na and Mg among alkali and alkaline earth metals [O] . Yuanyue Liu, Boris V. Merinov, William A. Goddard III 2016

机译：石墨中钠容量低的原因以及碱金属和碱土金属中Na和Mg的底物结合通常较弱
7. Schottky Barrier Modulation of Metal/4H-SiC Junction with Thin Interface Spacer Driven by Surface Polarization Charge on 4H-SiC Substrate [O] . Choi Gahyun, Yoon Hoon Hahn, Jung Sungchul, 2016

机译：由4H-SiC衬底上的表面极化电荷驱动的具有薄界面间隔物的金属/ 4H-SiC结的肖特基势垒调制
8. Electron Emission of Alkaline and Alkaline- Earth Vapors Absorbed on Refractory Metals [R] . Alleau, T., Desplat, J. L. 1969

机译：吸附在难熔金属上的碱和碱土蒸气的电子发射

Enhanced-oxidation and interface modification on 4H-SiC(0001) substrate using Alkaline earth metal

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