Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

Himwas C.; Songmuang R.; Le Si Dang; Bleuse J.; Rapenne L.; Sarigiannidou E.; Monroy E.

首页> 外文期刊>Applied Physics Letters >Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

【24h】

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

机译：AlGaN / AlN Stranski-Krastanov量子点发出的深紫外线的热稳定性

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

We report on the structural and optical properties of AlGaN/AlN quantum dot (QD) superlattices synthesized by plasma-assisted molecular-beam epitaxy. Modifying the composition and geometry of the QDs, the peak emission wavelength can be shifted from 320 nm to 235 nm while keeping the internal quantum efficiency larger than 30%. The efficient carrier confinement is confirmed by the stability of the photoluminescence (PL) intensity and decay time, from low temperature up to 100 K. Above this threshold, the PL intensity decreases and the radiative lifetime increases due to carrier thermalization. We also identified the intraband electronic transition between the ground level of the conduction band and the first excited state confined along the growth axis (s-pz).

机译：我们报告了通过等离子体辅助分子束外延合成的AlGaN / AlN量子点（QD）超晶格的结构和光学性质。通过改变量子点的组成和几何形状，可以将峰值发射波长从320 nm转换为235 nm，同时保持内部量子效率大于30％。从低温到100 K，光致发光（PL）强度和衰减时间的稳定性证实了有效的载流子限制。由于载流子的热化，在此阈值以上，PL强度下降，辐射寿命延长。我们还确定了导带的地平面和沿生长轴（s-pz）限制的第一个激发态之间的带内电子跃迁。

著录项

来源
《Applied Physics Letters》 |2012年第24期|p.1-5|共5页
作者
Himwas C.; Songmuang R.; Le Si Dang; Bleuse J.; Rapenne L.; Sarigiannidou E.; Monroy E.;
展开▼
作者单位

CEA-CNRS Group “Nanophysique et Semiconducteurs,” Institut Néel-CNRS, 25 rue des Martyrs, 38042 Grenoble Cedex 9, France;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类
关键词

相似文献

外文文献
中文文献
专利

1. Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots [J] . Himwas C., den Hertog M., Bellet-Amalric E., Journal of Applied Physics . 2014,第2期

机译：AlGaN / AlN Stranski-Krastanov量子点增强的室温中紫外发射
2. Enhanced room-temperature mid-ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots [J] . C. Himwas, M. den Hertog, E. Bellet-Amalric, Journal of Applied Physics . 2014,第2期

机译：AlGaN / AlN Stranski-Krastanov量子点增强的室温中紫外发射
3. Thermal stability of the deep ultraviolet emission from AIGaN/AIN Stranski-Krastanov quantum dots [J] . C. Himwas, R. Songmuang, Le Si Dang, Applied Physics Letters . 2012,第24期

机译：AIGaN / AIN Stranski-Krastanov量子点发出的深紫外线的热稳定性
4. Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substrates [C] . Fareed, Q., Jain, . 2003

机译：AlN基体衬底上基于AlGaN的量子阱中的深紫外发射
5. Development of ingan quantum dots by the Stranski-Krastanov method and droplet heteroepitaxy. [D] . Woodward, Jeffrey Michael. 2017

机译：通过Stranski-Krastanov方法开发的Ingan量子点和液滴异质外延。
6. Deep-Ultraviolet AlGaN/AlN Core-Shell Multiple Quantum Wells on AlN Nanorods via Lithography-Free Method [O] . Jinwan Kim, Uiho Choi, Jaedo Pyeon, -1

机译：通过无光刻法在AlN纳米棒上的深紫外AlGaN / AlN核壳多量子阱
7. Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region [O] . Banal Ryan G., Funato Mitsuru, Kawakami Yoichi 2011

机译：在深紫外光谱区域发射的AlGaN / AlN量子阱具有极高的内部量子效率

Thermal stability of the deep ultraviolet emission from AlGaN/AlN Stranski-Krastanov quantum dots

摘要

著录项

相似文献

相关主题

期刊订阅