Junction parameters and characterization of Au-Ge_(15)In_5Se_(80)/p-Si/Al heterojunction

M. M. El-Nahass; M. H. Ali; E. A. A. El-Shazly; I. T. Zedan

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Junction parameters and characterization of Au-Ge_(15)In_5Se_(80)/p-Si/Al heterojunction

机译：Au / n-Ge_（15）In_5Se_（80）/ p-Si / Al异质结的结参数及表征

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The analysis of the electrical properties of Au-Ge_(15)In_5Se_(80)/p-Si/Al heterojunction is examined. I-V characteristics show diode-like behavior. The series resistance is found to decrease with increasing the temperature in three different methods of calculations. The thermionic emission mechanism is found to be the operating mechanism at relatively low forward voltages (V < 0.25). While, at relatively high forward voltage, the space charge limited conduction is the operating mechanism. The rectification ratio, ideality factor, barrier height, total trap concentration and built-in voltage are determined. The capacitance-voltage (C-V) characteristics of Au-Ge_(15)In_5Se_(80)/p-Si/Al heterojunction are also investigated. The I-V curve of the Au-Ge_(15)In_5Se_(80)/p-Si/Al heterojunction in the dark and after illumination is clarified.

机译：检验了Au / n-Ge_（15）In_5Se_（80）/ p-Si / Al异质结的电性能分析。 I-V特性显示出类似二极管的行为。发现在三种不同的计算方法中，串联电阻随着温度的升高而降低。发现热电子发射机理是在相对低的正向电压（V <0.25）下的工作机理。而在相对较高的正向电压下，空间电荷受限的传导是工作机制。确定整流比，理想因子，势垒高度，总阱浓度和内置电压。还研究了Au / n-Ge_（15）In_5Se_（80）/ p-Si / Al异质结的电容-电压（C-V）特性。明确了Au / n-Ge_（15）In_5Se_（80）/ p-Si / Al异质结在黑暗和光照后的I-V曲线。

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《Applied Physics》 |2016年第8期|780.1-780.8|共8页
作者
M. M. El-Nahass; M. H. Ali; E. A. A. El-Shazly; I. T. Zedan;
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作者单位

Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo 11757, Egypt;

Physics Department, Faculty of Science, Ain Shams University, Abassia, Cairo 11556, Egypt;

Physics Department, Faculty of Education, Ain Shams University, Roxy, Cairo 11757, Egypt;

Basic Science Department, High Institute of Engineering and Technology, El-Arish, North Sinai, Egypt;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Junction parameters and characterization of Au-Ge_(15)In_5Se_(80)/p-Si/Al heterojunction

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