• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文OA文献 >Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications
【2h】

Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications

机译：用于太阳能电池的Cr / n-BaSi2肖特基结和n-BaSi2 / p-Si异质结二极管的电性能分析

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Current status and future prospects towards BaSi2 pn junction solar cells are presented. As a preliminary step toward the formation of BaSi2 homojunction diodes, diodes with a Cr/n-BaSi2 Schottky junction and an n-BaSi2/p-Si hetero-junction have been fabricated to investigate the electrical properties of the n-BaSi2. Clear rectifying properties were observed in the current density versus voltage characteristics in both diodes. From the capacitance-voltage measurements, the build-in potential, V D, was 0.53 V in the Cr/n-BaSi2 Schottky junction diode, and the Schottky barrier height was 0.73 eV calculated from the thermoionic emission theory; the V D was about 1.5 V in the n-BaSi2/p-Si hetero-junction diode, which was consistent with the difference in the Fermi level between the n-BaSi2 and the p-Si.
机译：介绍了BaSi2 pn结太阳能电池的现状和未来前景。作为形成BaSi2同质结二极管的初步步骤，已制造了具有Cr / n-BaSi2肖特基结和n-BaSi2 / p-Si异质结的二极管，以研究n-BaSi2的电性能。在两个二极管的电流密度与电压特性之间观察到清晰的整流特性。根据电容电压测量，Cr / n-BaSi2肖特基结二极管的内建电势V D为0.53 V，根据热离子发射理论计算，肖特基势垒高度为0.73 eV。在n-BaSi2 / p-Si异质结二极管中，V D约为1.5 V，这与n-BaSi2和p-Si之间的费米能级差一致。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号