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Investigation of conductivity of adhesive layer including indium tin oxide particles for multi-junction solar cells

机译:用于多结太阳能电池的含铟锡氧化物颗粒的粘合层的电导率研究

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摘要

We report connection conductivity (C_c) of adhesive which including In_2O_3-SnO_2 (ITO) particles developed for fabrication of stacked-type-multi-junction solar cells. The commercial 20-μm sized ITO particles were heated in vacuum at temperature ranging from 800 to 1,300 ℃ for 10 min to increase C_c. 6.2 wt% ITO particles were dispersed in commercial Cemedine adhesive gel to form 100 samples structured with n-type Si/adhesive-type Si (n-Si sample) and p-type Si/adhesive/p-type Si (p-Si sample). Current density as a function of voltage (J-V) characteristics gave C_c. It ranged from 4.3 to 1.0 S/cm~2 for the n-Si sample with 800 ℃ heat-treated ITO particles. Its standard deviation was 0.59 S/cm~2. On the other hand, it ranged from 2.0 to 0.6 S/cm~2 for the p-Si sample with 800 ℃ heat-treated ITO particles. Its standard deviation was 0.22 S/cm~2. The distribution of C_c mainly resulted from contact efficiency of ITO particles to substrate. We theoretically estimated that present C_c achieved a low loss of the power conversion efficiency (E_(ff)) lower than 0.3 % in the application of fabrication of multi-junction solar cell with an intrinsic E_(ff) of 30 % and an open circuit voltage above 1.9 V.
机译:我们报告了粘合剂的连接电导率(C_c),其中包括为制造堆叠型多结太阳能电池而开发的In_2O_3-SnO_2(ITO)颗粒。将商用的20μm尺寸的ITO颗粒在真空中于800至1,300℃的温度下加热10分钟以提高C_c。将6.2 wt%的ITO颗粒分散在商品Cemedine粘合剂凝胶中,形成100个样品,分别由n型Si /粘合剂/ n型Si(n-Si样品)和p型Si /粘合剂/ p型Si(p-Si硅样品)。电流密度与电压(J-V)特性的关系为C_c。对于800℃热处理ITO粒子的n-Si样品,其介电常数为4.3〜1.0 S / cm〜2。标准偏差为0.59S / cm〜2。另一方面,对具有800℃热处理过的ITO颗粒的p-Si样品,其范围为2.0至0.6 S / cm〜2。标准偏差为0.22S / cm〜2。 C_c的分布主要是由于ITO颗粒与基板的接触效率所致。我们从理论上估计,在制造本征E_(ff)为30%且开路的多结太阳能电池的应用中,当前C_c的功率转换效率(E_(ff))的损失低于0.3%高于1.9 V的电压。

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