机译:掺杂剂引入的单层磷化硼的选择性气体吸附和I-V响应:第一性原理研究
Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guilin 541004, Peoples R China|Chongqing Univ, Educ Minist China, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China;
Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guilin 541004, Peoples R China|Chongqing Univ, Educ Minist China, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China;
Chongqing Univ, Coll Optoelect Engn, Chongqing 400044, Peoples R China;
Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guilin 541004, Peoples R China|Chongqing Univ, Educ Minist China, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China|Chongqing Univ, Coll Optoelect Engn, Chongqing 400044, Peoples R China;
Guilin Univ Elect Technol, Sch Mech & Elect Engn, Guilin 541004, Peoples R China|Chongqing Univ, Educ Minist China, Key Lab Optoelect Technol & Syst, Chongqing 400044, Peoples R China;
Monolayer BP; Gas adsorption; I-V curve; Density functional theory;
机译:具有高载流子迁移率的碳 - 磷化膦单层,可察觉的I-V对优质气体感测的响应
机译:磷化硼单层作为锂硫电池的潜在锚固材料:一项第一性原理研究
机译:硼 - 磷化物单层作为锂 - 硫电池的潜在锚固材料:一项原则研究
机译:单层六边形氮化物上的氢气和水吸附(H-BN):第一原理计算
机译:硅锗(001):硼气体源分子束外延期间H介导的膜生长和掺杂剂结合动力学。
机译:吸附气体传感和光学性质屠宰单层的分子:一项第一原则研究
机译:用III-IV-V掺杂剂调整单层六方硼磷化物的电子性质