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Defects generated by MF magnetron sputtering and their influences on the electrical and optical properties of Al doped ZnO thin films

机译：MF磁控溅射产生的缺陷及其对Al掺杂ZnO薄膜的电学和光学性能的影响

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摘要

In this paper, the defects of Al doped ZnO films generated by magnetron sputtering in the deposition processes are comprehensively investigated. It is found that oxygen ion bombardment deteriorates the crystallinity and generates oxygen related defects, such as oxygen interstitials (O-i), chemisorbed oxygen at the grain boundaries (O-GB), and oxygen vacancies (V-O). O-i and OGB decrease the carrier concentration and mobility of the pristine films remarkably, but they can be removed by hydrogen annealing. However, the grain boundary scattering originated from poor crystallinity cannot be reduced by the annealing below 450 degrees C. Moreover, the in-situ temperature-dependent resistivity measurement under hydrogen atmosphere suggests that hydrogen atoms are incorporated into the ZnO: Al films and interact with V-O. We propose that there are two energetically favorable states for the incorporated hydrogen. The defect configurations of (H-2)(i) and H-O +H-i are assigned to the high resistivity state (HRS) and low resistivity state (LRS) respectively and the switching between these two states is activated by V-O and mediated by a metastable state (H-2)*(0). The transformation between these two resistivity states leads to a hysteresis loop during the heating and cooling process. (C) 2015 Elsevier B.V. All rights reserved.
机译：本文对磁控溅射沉积过程中掺铝的ZnO薄膜的缺陷进行了综合研究。发现氧离子轰击使结晶度劣化并产生与氧有关的缺陷，例如氧间隙（O-i），晶界处的化学吸附的氧（O-GB）和氧空位（V-O）。 O-i和OGB显着降低了原始膜的载流子浓度和迁移率，但可以通过氢退火将其除去。然而，由于结晶度差而引起的晶界散射不能通过在450摄氏度以下退火来降低。此外，在氢气氛下进行的随温度变化的电阻率现场测量表明，氢原子被掺入ZnO：Al膜中并与之相互作用。 VO。我们提出对于掺入的氢有两个能量上有利的状态。 （H-2）（i）和HO + Hi的缺陷构型分别分配给高电阻率状态（HRS）和低电阻率状态（LRS），并且这两种状态之间的切换由VO激活并由亚稳介导状态（H-2）*（0）。这两个电阻率状态之间的转换导致在加热和冷却过程中出现磁滞回线。 （C）2015 Elsevier B.V.保留所有权利。

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  • 来源
    《Applied Surface Science》 |2015年第1期|392-400|共9页
  • 作者

    Hao Changshan; Shirolkar Mandar M.; Li Jieni; Wu Binjun; Yin Shiliu; Li Ming; Wang Haiqian;

  • 作者单位

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China|QinZhou Coll, Qinzhou 535000, Guangxi, Peoples R China;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;

    Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    Al films; Hydrogen annealing; Oxygen interstitials; Oxygen vacancies; Hysteresis loop;

    机译：铝膜;氢退火;氧间隙;氧空位;磁滞回线;

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