Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

Alessandro Molle; Athanasios Dimoulas; Guy Le Lay; Max Lemme

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Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

机译：特刊：后硅CMOS器件的途径：从高迁移率通道到类似石墨烯的2D纳米片

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The present Special Issue of Applied Surface Science is intended to provide a collection of peer-reviewed contributions presented at the Symposium I "The route to post-Si CMOS devices: from high mobility channels to graphene-like 2D nanosheets" of the E-MRS 2013 Spring Meeting, held in Strasbourg (France), May 27-30,2013.

机译：本期《应用表面科学》特刊旨在提供在E-MRS的研讨会I“进入后Si CMOS器件的道路：从高迁移率通道到类石墨烯的2D纳米片”上发表的同行评审论文的集合。 2013年春季会议，2013年5月27日至30日在法国斯特拉斯堡举行。

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《Applied Surface Science》 |2014年第1期|1-2|共2页
作者
Alessandro Molle; Athanasios Dimoulas; Guy Le Lay; Max Lemme;
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Laboratorio MDM, IMM-CNR, via C. Olivetti 2, I-20864 Agrate Brianza, MB, Italy;

NCSR-DEMOKRITOS, Patriarchou Grigoriou & Neapoleos, 153 10 Aghia Paraskevi, Athens, Greece;

Aix-Marseille University, P1IM-CNRS, Campus de Saint Jerome, F-13397 Marseille Cedex, France;

University of Siegen, Holderlinstr. 3, 57076 Siegen, Germany;

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2. Device structures and carrier transport properties of advanced CMOS using high mobility channels [J] . S. Takagi, T. Tezuka, T. Irisawa, Solid-State Electronics . 2007,第4期

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Special Issue: The route to post-Si CMOS devices: From high mobility channels to graphene-like 2D nanosheets

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