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Chemical roles on Cu-slurry interface during copper chemical mechanical planarization

机译：铜化学机械平面化过程中铜浆界面上的化学作用

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摘要

In order to optimize the existing slurry for low down-pressure chemical mechanical polish-ing/planarization (CMP), copper CMP was conducted in H_2O_2 based slurries with benzotriazole (BTA) and glycine at different pH values. The film composition was investigated by the Nano Hardness Tester and XPS tests. Furthermore, the film structure forming on the copper surface at different pH values was investigated by adopting electrochemical impedance spectroscopy (EIS) technology. In the acidic slurry, discontinuous and porous BTA film covering the Cu/Cu_2O surface enhanced the mechanical effect during Cu CMP process, resulted in highest CMP removal rate. In neutral slurry, the lowest CMP removal rate and static corrosion rate were resulted from compacted passivation film on the copper surface. In the alkaline slurry, the mechanical effect was limited by the rapid chemical dissolution. The results will benefit optimization of the slurry and operate conditions during low down-pressure CMP process.
机译：为了优化用于低压化学机械抛光/平面化（CMP）的现有浆液，在H_2O_2基浆液中以不同pH值的苯并三唑（BTA）和甘氨酸进行了铜CMP。通过纳米硬度测试仪和XPS测试研究了膜组成。此外，采用电化学阻抗谱（EIS）技术研究了在不同pH值下铜表面上形成的膜结构。在酸性浆液中，覆盖Cu / Cu_2O表面的不连续且多孔的BTA膜增强了Cu CMP过程中的机械效果，导致最高的CMP去除率。在中性浆料中，最低的CMP去除速率和静态腐蚀速率是由铜表面上的致密钝化膜产生的。在碱性浆液中，机械作用受到化学物质快速溶解的限制。结果将有利于在低压下CMP工艺中优化浆料和操作条件。

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  • 来源
    《Applied Surface Science》 |2014年第28期|287-292|共6页
  • 作者

    Jing Li; Yuhong Liu; Yan Pan; Xinchun Lu;

  • 作者单位

    State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China,College of Mechanical and Electrical Engineering, China University of Petroleum (East China), Qingdao 266580, China;

    State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China;

    State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China;

    State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Copper; CMP; Chemical effect; Passivation film; EIS;

    机译：铜;CMP;化学作用;钝化膜;信息系统;

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