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首页> 外文期刊>Applied Surface Science >Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid
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Modulated optical properties of nonpolar gallium nitride via surface in-situ functionalization with cysteamine assisted phosphoric acid

机译：半胱胺辅助磷酸通过表面原位官能化作用调制的非极性氮化镓的光学性质

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摘要

In-situ functionalization of nonpolar a-plane gallium nitride (GaN) surface was achieved by adding cysteamine to phosphoric acid, aiming to modulate its optical properties. The emission properties and oxide formation were explored through surface characterization with atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and water contact angle. Nonpolar a-plane bulk GaN sample sliced from a GaN boule and nonpolar a-plane GaN thin layer heteroepitaxially grown on r-plane sapphire were used to elucidate the effects of in-situ functionalization of identical surface orientation of GaN crystals with different defect ensembles. The addition of cysteamine to the phosphoric acid solution was found to result in: (i) increased surface roughness, (ii) no change to hydrophobicity, (iii) decreased oxygen content at high solution temperatures and increased gallium and nitrogen content versus phosphoric acid solutions at similar temperatures without cysteamine. The in-situ functionalization resulted in enhanced PL intensity from the nonpolar bulk GaN, while the PL intensity from the nonpolar heteroepitaxially grown GaN layer on sapphire was significantly reduced. The opposite PL modulation was explained by the effects of different defects present in the two samples on the nonradiative recombination.
机译：通过将半胱胺添加到磷酸中以调节其光学性能，实现了非极性a面氮化镓（GaN）表面的原位官能化。通过使用原子力显微镜（AFM），X射线光电子能谱（XPS），光致发光（PL）和水接触角的表面表征来探索发射特性和氧化物的形成。使用从GaN晶锭切片的非极性a平面块状GaN样品和异质外延生长在r平面蓝宝石上的非极性a平面GaN薄层来阐明具有不同缺陷集合的GaN晶体相同表面取向的原位功能化的影响。发现将半胱胺添加到磷酸溶液中会导致：（i）表面粗糙度增加；（ii）疏水性没有变化；（iii）与磷酸溶液相比，在高溶液温度下氧含量降低，镓和氮含量增加在没有半胱胺的相似温度下。原位官能化导致非极性块状GaN的PL强度增强，而蓝宝石上非极性异质外延生长的GaN层的PL强度显着降低。相反的PL调制通过两个样品中存在的不同缺陷对非辐射重组的影响来解释。

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