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Influence of processing gases on the properties of cold atmospheric plasma SiO_xC_y coatings

机译：处理气体对冷大气等离子SiO_xC_y涂层性能的影响

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摘要

Thin layers of SiO_xC_y (y=4-x and 3≤x≤4) were applied using a cold atmospheric plasma torch on glass substrates. The aim was to investigate using Atomic Force Microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and time-of-flight secondary ion mass spectrometry (Tof-Sims) the influence of the gases used on the morphology and composition of the deposits. A hexamethyldisilane (HMDS) precursor was injected in post-discharge in an air or nitrogen plasma using a carrier gas (air or nitrogen) and was applied on the substrate previously pre-treated by an air or nitrogen plasma. The carrier gas and plasma gas flows and the distance between the substrate and the plasma torch, the scanning speed, and the precursor flows were kept constant during the study. The gas used during activation pre-treatment showed no particular influence on the characteristics of the deposit. When air is used both as plasma and carrier gas, the coating layer is thicker (96 nm) than when nitrogen is used (64 nm). It was also evidenced that the gas carrying the precursor has little influence on the hydrophobicity of the coating, contrary to the plasma gas. The latter significantly influences the surface characteristics of the coatings. When air is used as plasma gas, a compact coating layer is obtained and the surface has a water contact angle (WCA) of 82°. When nitrogen is used, the deposit is more hydrophobic (WCA of 100°) and the deposit morphology is different. This increase in hydrophobicity could be correlated to the increase of Si-O-C bonds in the upper surface layers evidenced by XPS analyzes. This observation was then confirmed by Tof-Sims analyzes carried out on these thin layers. A uniform distribution of Carbons in the siloxane coating could also be observed using Tof-Sims 2D reconstruction images of cross sections of the deposited layers.
机译：使用冷大气等离子炬将SiO_xC_y薄层（y = 4-x和3≤x≤4）施加在玻璃基板上。目的是使用原子力显微镜（AFM），X射线光电子能谱（XPS）和飞行时间二次离子质谱（Tof-Sims）研究所用气体对沉积物的形态和组成的影响。在放电后，使用载气（空气或氮气）将六甲基乙硅烷（HMDS）前体注入到空气或氮气等离子体中，然后将其施加到预先通过空气或氮气等离子体预处理的基材上。在研究过程中，载气和等离子气体的流量以及基片与等离子炬之间的距离，扫描速度和前体流量保持恒定。在活化预处理过程中使用的气体对沉积物的特性没有特别的影响。当同时使用空气作为等离子体和载气时，涂层的厚度（96 nm）比使用氮气（64 nm）的涂层厚。还证明了与等离子体气体相反，携带前体的气体对涂层的疏水性影响很小。后者显着影响涂层的表面特性。当使用空气作为等离子气体时，可以获得致密的涂层，并且表面的水接触角（WCA）为82°。使用氮气时，沉积物的疏水性更高（WCA为100°），并且沉积物的形态也不同。疏水性的增加可能与XPS分析所证明的上表面Si-O-C键的增加有关。然后通过在这些薄层上进行的Tof-Sims分析证实了这一观察结果。使用沉积层横截面的Tof-Sims 2D重建图像，也可以观察到碳在硅氧烷涂层中的均匀分布。

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  • 来源
    《Applied Surface Science》 |2014年第1期|531-537|共7页
  • 作者

    H. Hamze; M. Jimenez; D. Deresmes; A. Beaurain; N. Nuns; M. Traisnel;

  • 作者单位

    UMET, ISP, CNRS 8207, Universite Lille Nord de France, Villeneuve d'Ascq, France;

    Universite Lille Nord de France, UMET, ISP, CNRS 8207,Villeneuve d'Ascq 59652, France;

    IEMN, CNRS 8520, Universite Lille Nord de France, Villeneuve d'Ascq, France;

    UCCS, CNRS 8181, Universite Lille Nord de France, Villeneuve d'Ascq, France;

    Institut Chevreul, Universite Lille Nord de France, Villeneuve d'Ascq, France;

    UMET, ISP, CNRS 8207, Universite Lille Nord de France, Villeneuve d'Ascq, France;

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  • 正文语种 eng
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  • 关键词

    Cold atmospheric plasma; SiO_xC_y coatings; Hexamethyldisilane; Tof-Sims; XPS;

    机译：冷大气等离子体;SiO_xC_y涂层;六甲基乙硅烷;Tof-Sims;XPS;

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