• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper
【24h】

Valence band offset and Schottky barrier at amorphous boron and boron carbide interfaces with silicon and copper

机译：非晶硼和碳化硼与硅和铜的界面处的价带偏移和肖特基势垒

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In order to understand the fundamental charge transport in a-B:H and a-BX:H (X=C, N, P) compound heterostructure devices, X-ray photoelectron spectroscopy has been utilized to determine the valence band offset and Schottky barrier present at amorphous boron compound interfaces formed with (100) Si and polished poly-crystalline Cu substrates. For interfaces formed by plasma enhanced chemical vapor deposition of a-B_(4-5)C:H on (100) Si, relatively small valence band offsets of 0.2 ± 0.2 eV were determined. For a-B:H/Cu interfaces, a more significant Schottky barrier of 0.8 ± 0.16 eV was measured. These results are in contrast to those observed for a-BN:H and BP where more significant band discontinuities (>1-2 eV) were observed for interfaces with Si and Cu.
机译：为了了解aB：H和a-BX：H（X = C，N，P）复合异质结构器件中的基本电荷传输，已利用X射线光电子能谱确定存在于其中的价带偏移和肖特基势垒与（100）Si和抛光的多晶Cu衬底形成的非晶硼化合物界面。对于通过等离子增强的化学气相沉积在（100）Si上形成a-B_（4-5）C：H形成的界面，确定了0.2±0.2 eV的相对较小的价带偏移。对于a-B：H / Cu界面，测得的肖特基势垒更为明显，为0.8±0.16 eV。这些结果与a-BN：H和BP观察到的结果相反，在a-BN：H和BP中，与Si和Cu的界面观察到更显着的谱带不连续性（> 1-2 eV）。

著录项

  • 来源
    《Applied Surface Science》 |2013年第ptab期|545-551|共7页
  • 作者

    Sean W. King; Marc French; Guanghai Xu; Benjamin French; Milt Jaehnig; Jeff Bielefeld; Justin Brockman; Markus Kuhn;

  • 作者单位

    Logic Technology Development, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;

    Logic Technology Development, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;

    Logic Technology Development, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;

    Ocotillo Materials Laboratory, Intel Corporation, 4500 S. Dobson Road, Chandler, AZ 85248, USA;

    Logic Technology Development, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;

    Logic Technology Development, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;

    Logic Technology Development, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;

    Logic Technology Development, Intel Corporation, 5200 NE Elam Young Parkway, Hillsboro, OR 97124, USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Boron; Carbide; XPS; Valence band offset; Amorphous;

    机译：硼;碳化物;XPS;价带偏移;非晶态;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号