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首页> 外文期刊>Applied Surface Science >Pulsed direct current magnetron sputtered nanocrystalline tin oxide films
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Pulsed direct current magnetron sputtered nanocrystalline tin oxide films

机译：脉冲直流磁控溅射纳米氧化锡薄膜

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摘要

The nanocrystalline tin oxide (SnO_2) films were deposited on glass substrates by pulsed magnetron sputtering technique and subsequently annealed from 200 to 500 ℃. The structural, microstructural, electrical, and optical properties of as deposited and annealed SnO_2 films were studied. The crystallinity degree of the films increased with annealing temperature. Photoluminescence (PL) measurements showed that the emission peaks have low intensity and are positioned at 535 nm (2.31 eV) and 605 nm (2.05 eV) in as deposited SnO_2 films. The intensity of PL peak increases sharply with the increasing of annealing tern- perature. The as deposited films exhibited high electrical resistivity and low optical transmittance. After annealing at 500 ℃, the electrical resistivity of the films decreased to the lowest value of 0.015 Ω cm, being the optical transmittance 90%.
机译：采用脉冲磁控溅射技术在玻璃基板上沉积了纳米氧化锡（SnO_2）薄膜，并在200〜500℃下进行了退火。研究了沉积和退火后的SnO_2薄膜的结构，微观结构，电学和光学性质。薄膜的结晶度随退火温度的升高而增加。光致发光（PL）测量表明，在沉积的SnO_2薄膜中，发射峰的强度很低，位于535 nm（2.31 eV）和605 nm（2.05 eV）处。 PL峰的强度随着退火温度的增加而急剧增加。所沉积的膜表现出高电阻率和低透光率。 500℃退火后，薄膜的电阻率降至最低值0.015Ωcm，透光率为90％。

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  • 来源
    《Applied Surface Science》 |2012年第22期|p.8902-8907|共6页
  • 作者

    A. Sivasankar Reddy; N.M. Figueiredo; A. Cavaleiro;

  • 作者单位

    SEG-CEMUC - Department of Mechanical Engineering, University of Coimbra, 3030-788, Coimbra, Portugal;

    SEG-CEMUC - Department of Mechanical Engineering, University of Coimbra, 3030-788, Coimbra, Portugal;

    SEG-CEMUC - Department of Mechanical Engineering, University of Coimbra, 3030-788, Coimbra, Portugal;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    oxides; thin films; sputtering; electrical; optical;

    机译：氧化物薄膜;溅射电气光学的;

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