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首页> 外文期刊>Applied Surface Science >Enhanced photoluminescence of rare-earth doped films prepared by off-axis pulsed laser deposition
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Enhanced photoluminescence of rare-earth doped films prepared by off-axis pulsed laser deposition

机译：通过离轴脉冲激光沉积制备的稀土掺杂薄膜的增强的光致发光

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Alternate pulsed laser deposition from the host (A1_2O_3) and dopant (Er, Yb) targets has been used to prepare artificially nanostructured films in which the rare earth ion-ion separation is controlled in the nanometer scale in order to control energy transfer between ions. One series of films was prepared in the standard on-axis configuration, i.e. a static substrate being centred with respect to the plasma expansion axis. A second series of films was prepared by rotating the substrate with respect to a shifted axis parallel to the plasma expansion one (off-axis configuration). The latter configuration leads to films with enhanced thickness and Er related photoluminescence intensity uniformity. More interestingly, the Er related photoluminescence lifetime in as-grown films increases up to 2.5 ms, which is much higher than the maximum value of 1 ms obtained for the on-axis configuration films. This enhancement is discussed in terms of a decrease of defect density when using the off-axis configuration.
机译：来自主体（Al_2O_3）和掺杂物（Er，Yb）靶的交替脉冲激光沉积已用于制备人工纳米结构化的薄膜，其中稀土离子的分离控制在纳米尺度上，以控制离子之间的能量转移。以标准的轴上配置制备了一系列膜，即相对于等离子体膨胀轴居中的静态基材。通过相对于平行于等离子体膨胀轴（偏轴配置）的平移轴旋转基板来制备第二系列膜。后一种构造导致膜具有增加的厚度和与Er有关的光致发光强度均匀性。更有趣的是，成膜薄膜中与Er有关的光致发光寿命增加到2.5 ms，这远高于同轴配置薄膜的1 ms最大值。就使用离轴配置时缺陷密度的降低而言，讨论了这种增强。

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