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Influence of annealing temperature on the structural, optical and mechanical properties of ALD-derived ZnO thin films

机译:退火温度对ALD衍生ZnO薄膜结构,光学和力学性能的影响

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摘要

ZnO thin films grown on Si(111) substrates by using atomic layer deposition (ALD) were annealed at the temperatures ranging from 300 to 500℃. The X-ray diffraction (XRD) results show that the annealed ZnO thin films are highly (002)-oriented, indicating a well ordered microstructure. The film surface examined by the atomic force microscopy (AFM), however, indicated that the roughness increases with increasing annealing temperature. The photoluminescence (PL) spectrum showed that the intensity of UV emission was strongest for films annealed at 500℃. The mechanical properties of the resultant ZnO thin films investigated by nanoindentation reveal that the hardness decreases from 9.2 GPa to 7.2 GPa for films annealed at 300℃ and 500℃, respectively. On the other hand, the Young's modulus for the former is 168.6 GPa as compared to a value of 139.5 GPa for the latter. Moreover, the relationship between the hardness and film grain size appear to follow closely with the Hall-Petch equation.
机译:使用原子层沉积(ALD)在Si(111)衬底上生长的ZnO薄膜在300至500℃的温度下退火。 X射线衍射(XRD)结果表明,退火后的ZnO薄膜具有高度(002)取向,表明组织结构良好。然而,通过原子力显微镜(AFM)检查的膜表面表明,粗糙度随着退火温度的升高而增加。光致发光(PL)光谱表明,在500℃退火的薄膜的紫外线发射强度最强。通过纳米压痕研究得到的ZnO薄膜的力学性能表明,分别在300℃和500℃退火的薄膜的硬度从9.2 GPa降低到7.2 GPa。另一方面,前者的杨氏模量为168.6 GPa,而后者的杨氏模量为139.5 GPa。此外,硬度与薄膜晶粒尺寸之间的关系似乎与霍尔-帕奇方程密切相关。

著录项

  • 来源
    《Applied Surface Science》 |2011年第17期|p.7900-7905|共6页
  • 作者单位

    Department of Materials Science and Engineering, l-Shou University, Kaohsiung 840, Taiwan;

    Department of Materials Science and Engineering, l-Shou University, Kaohsiung 840, Taiwan;

    Department of Materials Science and Engineering, l-Shou University, Kaohsiung 840, Taiwan;

    Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan;

    National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan;

    Department of Mechanical Engineering, Yuan Ze University, Tao-Tuan 32003, Taiwan;

    Department of Applied Physics, National University of Kaohsiung, Kaohsiung 81148, Taiwan;

    Central Product Solutions, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, Kaohsiung 811, Taiwan;

    Central Product Solutions, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, Kaohsiung 811, Taiwan;

    Central Product Solutions, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, Kaohsiung 811, Taiwan;

    Institute of Materials Science & Engineering, National Central University, Chung-Li 320, Taiwan;

    Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    zno thin films; atomic layer deposition; xrd; afm; nanoindentation; hardness;

    机译:锌薄膜原子层沉积;xrd;afm;纳米压痕硬度;

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