机译:退火温度对ALD衍生ZnO薄膜结构,光学和力学性能的影响
Department of Materials Science and Engineering, l-Shou University, Kaohsiung 840, Taiwan;
Department of Materials Science and Engineering, l-Shou University, Kaohsiung 840, Taiwan;
Department of Materials Science and Engineering, l-Shou University, Kaohsiung 840, Taiwan;
Department of Applied Science, National Hsinchu University of Education, Hsinchu 300, Taiwan;
National Synchrotron Radiation Research Center, Hsinchu 300, Taiwan;
Department of Mechanical Engineering, Yuan Ze University, Tao-Tuan 32003, Taiwan;
Department of Applied Physics, National University of Kaohsiung, Kaohsiung 81148, Taiwan;
Central Product Solutions, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, Kaohsiung 811, Taiwan;
Central Product Solutions, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, Kaohsiung 811, Taiwan;
Central Product Solutions, Advanced Semiconductor Engineering, Inc., 26 Chin 3rd Rd., Nantze Export Processing Zone, Kaohsiung 811, Taiwan;
Institute of Materials Science & Engineering, National Central University, Chung-Li 320, Taiwan;
Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan;
zno thin films; atomic layer deposition; xrd; afm; nanoindentation; hardness;
机译:膜厚和退火温度对通过原子层沉积法生长的Si(100)衬底上ZnO薄膜的结构和光学性质的影响
机译:Al浓度和退火温度对Al共掺杂ZnO薄膜结构,光学和电学性质的影响
机译:退火温度对溶胶-凝胶法制备的Mg-Al共掺杂ZnO薄膜结构和光学性能的影响
机译:通过退火氧气压力影响Li-掺杂ZnO薄膜的结构,电气和光学性能
机译:退火温度对Sol-Gel ZnO薄膜力学性能的影响。
机译:快速热退火对原子层沉积生长Zr掺杂ZnO薄膜的结构电学和光学性质的影响
机译:时效时间和退火温度对溶胶 - 凝胶ZnO薄膜结构和光学性质的影响