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The effect of geometry and post-annealing on surface acoustic wave characteristics of AlN thin films prepared by magnetron sputtering

机译:几何形状和后退火对磁控溅射制备的AlN薄膜的表面声波特性的影响

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This paper describes experimental relationship between surface acoustic wave (SAW) properties of two-port SAW resonators based on polycrystalline aluminum nitride (AlN) thin films grown on Si substrates by using a pulsed reactive magnetron sputtering system and their geometry's parameters. Moreover, the influence of post-deposition heat treatment on SAW properties of AlN thin films was investigated at different annealing temperature (600 ℃ and 900 ℃). The measurement results show the number of the inter-digital transducers (IDT) finger pairs (N), the number of reflectors grating pairs (R) and the IDT center-to-center distance (L) related to insertion loss of SAW resonators. The best result of insertion loss was 15.6 dB for SAW resonators with R = 160 pair, N = 5 pair and L = 750 μm. At the same geometry parameters, the SAW velocity and insertion loss were improved slightly after annealing at 600 ℃ and were worse for the films annealed at 900 ℃ by changes in the surface morphology and stress on the film.
机译:本文描述了使用脉冲反应磁控溅射系统在硅衬底上生长的基于多晶氮化铝(AlN)薄膜的两端口SAW谐振器的表面声波(SAW)特性与其几何参数之间的实验关系。此外,研究了在不同的退火温度(600℃和900℃)下,沉积后热处理对AlN薄膜SAW性能的影响。测量结果显示与SAW谐振器的插入损耗有关的叉指换能器(IDT)指对数(N),反射器光栅对数(R)和IDT中心距(L)。对于R = 160对,N = 5对和L = 750μm的SAW谐振器,插入损耗的最佳结果是15.6 dB。在相同的几何参数下,600℃退火后,SAW速度和插入损耗有所改善,而900℃退火后的膜由于表面形貌和应力的变化而变得更差。

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