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Synthesis And Characterization Of Gan Nanowires By A Catalyst Assisted Chemical Vapor Deposition

机译：催化剂辅助化学气相沉积法合成Gan纳米线及其表征

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摘要

GaN nanowires have been fabricated on Si(l11) substrates by chemical vapor deposition (CVD) method with NiCl_2 as catalyst and their compositions, microstmctures, morphologies and light emitting properties were characterized by X-ray diffraction (XRD), FT-IR spectrophotometer (FTIR), scanning electron microscope (SEM), high-resolution transmission electron microscope (HRTEM), Raman spectroscopy and photoluminescence (PL). The results demonstrate that the nanowires are single-crystal GaN with hexagonal wurtzite structure and high crystalline quality, having the size of 20-50 nm in diameter and several tens of microns in length with some nano-droplets on their tips, which reveals that the growth mechanism of GaN nanowires agrees with vapor-liquid-solid (VLS) process. Five first-order Raman active phonon bands move to low shift and A_1(TO), E_1(TO), and E_2 (high) bands are overlapped and broaden, which is caused by uncertainty in the phonon wave vector. Five non-first-order active Raman phonons also appear, which is caused by the small dimension and high surface disorder degree. A blue-shift of the band-gap emission occurs due to quantum confinement effect.
机译：GaN纳米线以NiCl_2为催化剂，通过化学气相沉积（CVD）方法在Si（11）衬底上制备，其组成，微观结构，形貌和发光特性通过X射线衍射（XRD），FT-IR分光光度计（ FTIR），扫描电子显微镜（SEM），高分辨率透射电子显微镜（HRTEM），拉曼光谱和光致发光（PL）。结果表明，纳米线是具有六方纤锌矿结构和高结晶质量的单晶GaN，其直径为20-50 nm，长度为数十微米，尖端上有一些纳米液滴。 GaN纳米线的生长机理与汽液固（VLS）工艺相吻合。五个一阶拉曼有源声子带移至低频，A_1（TO），E_1（TO）和E_2（高）谱带重叠并变宽，这是由声子波矢量的不确定性引起的。还出现了五个非一阶活性拉曼声子，这是由于尺寸小和表面无序度高引起的。带隙发射的蓝移由于量子限制效应而发生。

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