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Determination of electrical types in the P-doped ZnO thin films by the control of ambient gas flow

机译：通过控制环境气流确定P掺杂ZnO薄膜中的电类型

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摘要

Phosphorus (P)-doped ZnO thin films with amphoteric doping behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering with various argon/oxygen gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio without post-annealing. The P-doped ZnO films grown at a argon/oxygen ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of 1.5 × 10~(17) cm~(-3) and 2.5cm~2/Vs, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of P~(3-) ions with a larger ionic radius in the O~(2-) sites. This indicates that a p-type mechanism was due to the substitutional P_o. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO-Si heterojunction light emitting diode showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.
机译：通过射频磁控溅射以不同的氩/氧比，在两面蓝宝石衬底上生长具有两性掺杂行为的掺磷（P）的ZnO薄膜。通过改变气体比例而不进行后退火，可以控制P掺杂ZnO薄膜中的电类型。以3/1的氩/氧比生长的P掺杂ZnO薄膜具有p型导电性，空穴浓度和空穴迁移率分别为1.5×10〜（17）cm〜（-3）和2.5cm〜2 / Vs ， 分别。 X射线衍射表明，ZnO（0002）峰移至较低角度，这是由于具有较大离子半径的P〜（3-）离子位于O〜（2-）位。这表明p型机制是由于取代P_o。 p型ZnO薄膜的低温光致发光显示与p型有关的中性受体结合激子发射。 p-ZnO / n-Si异质结发光二极管显示出典型的整流行为，这证实了ZnO薄膜在沉积状态下的p型特性，尽管存在与深层相关的电致发光。

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  • 来源
    《Applied Surface Science》 |2010年第14期|p.4438-4441|共4页
  • 作者

    Young Yi Kim; Won Suk Han; Hyung Koun Cho;

  • 作者单位

    School of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Cyeonggi-do 440-746, Republic of Korea;

    rnSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Cyeonggi-do 440-746, Republic of Korea;

    rnSchool of Advanced Materials Science and Engineering, Sungkyunkwan University, 300 Cheoncheon-dong, Jangan-gu, Suwon, Cyeonggi-do 440-746, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    zinc oxide; p-Type; sputtering; amphoteric doping;

    机译：氧化锌p型;溅射两性掺杂;

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