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首页> 外文期刊>Applied Surface Science >Low temperature fabrication of 5-10 nm SiO_2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method
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Low temperature fabrication of 5-10 nm SiO_2/Si structure using advanced nitric acid oxidation of silicon (NAOS) method

机译：使用高级硝酸硅氧化法（NAOS）低温制造5-10 nm SiO_2 / Si结构

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摘要

We have developed the advanced nitric acid oxidation of Si (NAOS) method to form relatively thick (5-10 nm) SiO_2/Si structure with good electrical characteristics. This method simply involves immersion of Si in 68 wt% nitric acid aqueous solutions at 120 ℃ with polysilazane films. Fourier transform infrared absorption (FT-IR) measurements show that the atomic density of the NAOS SiO_2 layer is considerably high even without post-oxidation anneal (POA), i.e., 2.28 × 10~(22) atoms/cm~2, and it increases by POA at 400℃ in wet-oxygen (2.32 × 10~(22) atoms/cm~2) or dry-oxygen (2.30 × 10~(22) atoms/cm~2). The leakage current density is considerably low (e.g., 10~(-5) A/cm~2 at 8 MV/cm) and it is greatly decreased (10~(-8) A/cm~2 at 8 MV/cm) by POA at 400 ℃ in wet-oxygen. POA in wet-oxygen increases the atomic density of the SiO_2 layer, and decreases the density of oxide fixed positive charges.
机译：我们已经开发出先进的Si硝酸氧化法（NAOS），以形成具有良好电学特性的相对较厚（5-10 nm）的SiO_2 / Si结构。该方法只需要在120℃下用聚硅氮烷薄膜将Si浸入68 wt％的硝酸水溶液中即可。傅立叶变换红外吸收（FT-IR）测量表明，即使不进行后氧化退火（POA），NAOS SiO_2层的原子密度也很高，即2.28×10〜（22）个原子/ cm〜2，并且在湿氧（2.32×10〜（22）原子/ cm〜2）或干氧（2.30×10〜（22）原子/ cm〜2）下，POA在400℃时增加。漏电流密度非常低（例如，在8 MV / cm时为10〜（-5）A / cm〜2），并且大大降低（在8 MV / cm时为10〜（-8）A / cm〜2）在湿氧中于400℃通过POA进行。湿氧中的POA会增加SiO_2层的原子密度，并降低氧化物固定正电荷的密度。

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  • 来源
    《Applied Surface Science》 |2010年第18期|P.5610-5613|共4页
  • 作者

    Yousuke Fukaya; Takashi Yanase; Yasushi Kubota; Shigeki Imai; Taketoshi Matsumoto; Hikaru Kobayashi;

  • 作者单位

    Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan CREST, Japan Science and Technology Organization, Japan;

    rnInstitute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan CREST, Japan Science and Technology Organization, Japan;

    rnMobile-LCD Group, Sharp Corporation, 1177-1, Gosana, Taki-cho, Mie 519-2192, Japan CREST, Japan Science and Technology Organization, Japan;

    rnCorporate Research and Development Group, Sharp Corporation, 2613-1, Ichinomoto-cho, Tenri, Nara 632-8567, Japan CREST, Japan Science and Technology Organization, Japan;

    rnInstitute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan CREST, Japan Science and Technology Organization, Japan;

    rnInstitute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan CREST, Japan Science and Technology Organization, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    low temperature oxidation; nitric acid oxidation; silicon; MOS; silicon dioxide;

    机译：低温氧化;硝酸氧化硅;MOS;二氧化硅;

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