Effect of annealing on the structural and optical properties of (311)B GaAsBi layers

著录项

• 来源
  《Applied Surface Science》 |2010年第18期|P.5688-5690|共3页
• 作者

  J.F. Rodrigo; D.L.Sales; M.Shafi; M.Henini; L.Turyanska; S.Novikov; S.I. Molina;

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• 作者单位

  Departamento de Ciencia de los Materiales e I.M.y Q. I., Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real, Cadiz, Spain;

  rnDepartamento de Ciencia de los Materiales e I.M.y Q. I., Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real, Cadiz, Spain;

  rnSchool of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham, United Kingdom;

  rnSchool of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham, United Kingdom Nottingham Nanotechnology &Nanoscience Centre, University of Nottingham, NG7 2RD Nottingham, United Kingdom;

  rnSchool of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham, United Kingdom;

  rnSchool of Physics and Astronomy, University of Nottingham, NG7 2RD Nottingham, United Kingdom;

  rnDepartamento de Ciencia de los Materiales e I.M.y Q. I., Facultad de Ciencias, Universidad de Cadiz, 11510 Puerto Real, Cadiz, Spain;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  semiconductor compounds; GaAsBi; transmission electron microscopy; molecular beam epitaxy; photoluminescence;

  机译：半导体化合物砷化镓透射电子显微镜分子束外延光致发光;