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Defect states in HfO_2 on deposited on Ge(111) and Ge(100) substrates

机译：Ge（111）和Ge（100）衬底上沉积的HfO_2中的缺陷状态

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摘要

There is considerable interest in the direct bonding between Si and Ge substrates and high-K nano-crystalline transition metal elemental and complex oxides. Implicit in this is the elimination of lower-K interfacial transition regions (ITRs) in gate stacks which limit device down-scaling of advanced devices to meet roadmap targets. A novel approach is presented in this article for (ⅰ) deposition of HfO_2 onto N-passivated Ge(111) and Ge(100) substrates, a process that also prevents subcutaneous oxidation of the Ge substrate during the deposition of nano-crystalline HfO_2 and non-crystalline Hf Si oxynitride dielectrics as well, and (ⅱ) the effective removal of Ge-N, during an 800 ℃ rapid thermal annealing. Removal of Ge-N bonding has been confirmed by X-ray absorption N K_1 spectra (XAS). However, even though X-ray photoelectron spectroscopy (XPS) studies has indicated no detectable Ge-O bonding at the Ge-dielectric interfaces as-deposited, a significant amount of Ge-O bonding throughout the entire HfO_2 film is detected by XPS and XAS after the 800℃ anneal. Current-voltage measurements indicate significantly higher leakage for HfO_2 films on Ge(111) compared with Ge(100). These correlate with differences in band edge defect state densities obtained from spectroscopic measurements, and are consistent with a more columnar, bonding morphology for direct bonding of HfO_2 on Ge(111) than for Ge(100).
机译：Si和Ge衬底与高K纳米晶体过渡金属元素氧化物和复合氧化物之间的直接键合引起了极大的兴趣。隐含的是消除了栅堆叠中的低K界面过渡区域（ITR），这限制了先进设备的设备缩小尺寸以满足路线图目标。本文介绍了一种新颖的方法，用于将HfO_2沉积到N钝化的Ge（111）和Ge（100）衬底上，该过程还可以防止在沉积纳米晶体HfO_2和NfO_2的过程中Ge衬底的皮下氧化。在800℃的快速热退火过程中，非晶态Hf Si氮氧化物电介质以及（ⅱ）有效去除Ge-N。 X射线吸收N K_1光谱（XAS）已确认去除Ge-N键。但是，尽管X射线光电子能谱（XPS）研究表明在沉积的Ge-介电界面上没有可检测到的Ge-O键，但是XPS和XAS可以检测到整个HfO_2膜中的大量Ge-O键800℃退火后。电流电压测量结果表明，与Ge（100）相比，Ge（111）上HfO_2薄膜的泄漏明显更高。这些与通过光谱测量获得的带边缘缺陷状态密度的差异相关，并且与HfO_2在Ge（111）上的直接键合比Ge（100）的柱状键合形态更为一致。

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