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首页> 外文期刊>Applied Surface Science >Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering
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Effects of substrate temperature and Zn addition on the properties of Al-doped ZnO films prepared by magnetron sputtering

机译：衬底温度和Zn添加量对磁控溅射制备Al掺杂ZnO薄膜性能的影响

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摘要

Al-doped ZnO (AZO) films prepared at different substrate temperature and AZO films with intentional Zn addition (ZAZO) during deposition at elevated substrate temperature were fabricated by radio frequency magnetron sputtering on glass substrate, and the resulting structural, electrical, optical properties together with the etching characteristics and annealing behavior were comparatively examined. AZO films deposited at 150 ℃ showed the optimum electrical properties and the largest grain size. XPS analysis revealed that AZO films deposited at elevated temperature of 450 ℃ contained large amount of Al content due to Zn deficiency, and that intentional Zn addition during deposition could compensate the deficiency of Zn to some extent. It was shown that the electrical, optical and structural properties of ZAZO films were almost comparable to those of AZO film deposited at 150 ℃, and that ZAZO films had much smaller etching rate together with better stability in severe annealing conditions than AZO films due possibly to formation of dense structure.
机译：通过射频磁控溅射在玻璃基板上制造在不同基板温度下制备的Al掺杂ZnO（AZO）膜和在升高的基板温度下沉积期间有意添加锌（ZAZO）的AZO膜，并将所得结构，电学和光学性质一起对腐蚀特性和退火行为进行了比较研究。 150℃下沉积的AZO膜表现出最佳的电性能和最大的晶粒尺寸。 XPS分析表明，在450℃的高温下沉积的AZO膜由于锌的缺乏而含有大量的Al，并且在沉积过程中故意添加Zn可以在一定程度上补偿Zn的缺乏。结果表明，ZAZO薄膜的电，光学和结构性能几乎与150℃下沉积的AZO薄膜相当，并且ZAZO薄膜的腐蚀速率要小得多，并且在苛刻的退火条件下比AZO薄膜具有更好的稳定性。形成致密的结构。

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  • 来源
    《Applied Surface Science》 |2009年第16期|7251-7256|共6页
  • 作者

    Y.H. Kim; K.S. Lee; T.S. Lee; B. Cheong; T.-Y. Seong; W.M. Kim;

  • 作者单位

    Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-7, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea Division of Materials Science and Engineering, Korea University, Anam-Dong 5-1, Sungbuk-gu, Seoul 136-701, Republic of Korea;

    Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-7, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea;

    Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-7, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea;

    Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-7, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea;

    Division of Materials Science and Engineering, Korea University, Anam-Dong 5-1, Sungbuk-gu, Seoul 136-701, Republic of Korea;

    Thin Film Materials Research Center, Korea Institute of Science and Technology, 39-7, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea;

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  • 正文语种 eng
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  • 关键词

    Al-doped ZnO; magnetron sputtering; deposition temperature; zn addition; transparent conducting oxide;

    机译：掺铝的ZnO;磁控溅射;沉积温度zn加法;透明导电氧化物;

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