Passivation of GaSb and InAs by pH-activated thioacetamide

著录项

• 来源
  《Applied Surface Science》 |2009年第16期|7121-7125|共5页
• 作者

  R. Stine; E.H. Aifer; L.J. Whitman; D.Y. Petrovykh;

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• 作者单位

  Naval Research Laboratory, Washington, DC 20375, USA;

  Naval Research Laboratory, Washington, DC 20375, USA;

  Naval Research Laboratory, Washington, DC 20375, USA Center for Nanoscale Science and Technology, National Institute of Standards and Technology, Gaithersburg, MD 20899, USA;

  Naval Research Laboratory, Washington, DC 20375, USA Department of Physics, University of Maryland, College Park, MD 20742, USA;

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• 收录信息
• 原文格式 PDF
• 正文语种 eng
• 中图分类
• 关键词

  x-ray photoelectron spectroscopy; gallium antimonide; indium arsenide; thioacetamide; passivation; oxidation;

  机译：X射线光电子能谱;锑化镓砷化铟硫代乙酰胺;钝化氧化;