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首页> 外文期刊>Applied Surface Science >Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum
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Failure behavior of ITO diffusion barrier between electroplating Cu and Si substrate annealed in a low vacuum

机译：低真空退火的电镀铜与硅衬底之间ITO扩散阻挡层的失效行为

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摘要

A structure of Cu/ITO( 10 nm)/Si was first formed and then annealed at various temperatures for 5 min in a rapid thermal annealing furnace under 10~(-2) Torr pressure. In Cu/ITO(10 nm)/Si structure, the ITO(10 nm) film was coated on Si substrate by sputtering process and the Cu film was deposited on ITO film by electroplating technique. The various Cu/ITO(10 nm)/Si samples were characterized by a four-point probe, a scanning electron microscope, an X-ray diffractometer, and a transmission electron microscope. The results showed that when the annealing temperature increases near 600 ℃ the interface between Cu and ITO becomes unstable, and the Cu_3Si particles begin to form; and when the annealing temperature increases to 650 ℃, a good many of Cu_3Si particles about 1 μm in size form and the sheet resistance of Cu/ITO(10 nm)/Si structure largely increases.
机译：首先形成Cu / ITO（10 nm）/ Si结构，然后在快速热退火炉中于10〜（-2）托压力下于各种温度下退火5分钟。在Cu / ITO（10nm）/ Si结构中，通过溅射工艺将ITO（10nm）膜涂覆在Si衬底上，并且通过电镀技术将Cu膜沉积在ITO膜上。通过四点探针，扫描电子显微镜，X射线衍射仪和透射电子显微镜对各种Cu / ITO（10 nm）/ Si样品进行表征。结果表明，当退火温度升高到600℃附近时，Cu和ITO之间的界面变得不稳定，并开始形成Cu_3Si颗粒。当退火温度升至650℃时，大量的Cu_3Si颗粒尺寸约为1μm，Cu / ITO（10 nm）/ Si结构的薄层电阻大大增加。

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  • 来源
    《Applied Surface Science》 |2009年第16期|7357-7360|共4页
  • 作者

    S.H. Hsieh; C.M. Chien; W.L. Liu; W.J. Chen;

  • 作者单位

    Department of Materials Science and Engineering, National Formosa University, 64, Wunhua Road, Huwei, Yunlin, 632, Taiwan;

    Department of Materials Science and Engineering, National Formosa University, 64, Wunhua Road, Huwei, Yunlin, 632, Taiwan;

    Department of Materials Science and Engineering, National Formosa University, 64, Wunhua Road, Huwei, Yunlin, 632, Taiwan;

    Graduate School of Materials Science, National Yunlin University of Science and Technology, 123 University Road, Section 3, Douliou, Yunlin, 64002, Taiwan;

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  • 正文语种 eng
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  • 关键词

    diffusion barrier; indium tin oxide (ITO); electroplating Cu; Cu metallization; Si substrate;

    机译：扩散势垒氧化铟锡（ITO）;电镀铜铜金属化硅基板;

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