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首页> 外文期刊>Applied Surface Science >Study of electronic states for V thin films deposited on 6H-SiC substrates by soft X-ray emission spectroscopy
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Study of electronic states for V thin films deposited on 6H-SiC substrates by soft X-ray emission spectroscopy

机译：软X射线发射光谱研究6H-SiC衬底上沉积的V薄膜的电子态

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摘要

Silicon carbide (SiC) is a candidate material for electronic devices to operate upon crucial environment. Electronic states of silicides and/or carbide/graphite formed in metal/SiC contact system is fundamentally important from the view point of device performance.rnWe study interface electronic structure of vanadium (V) thin-film deposited on 6H-SiC(0001) Si-face by using a soft X-ray emission spectroscopy (SXES). For specimens of V(38 nm)/6H-SiC (substrate) contact systems annealed at 850 ℃, the Si L_(2,3) emission spectra indicate different shapes and peak energies from the substrate. The product of materials such as silicides and/or ternary materials is suggested. Similarly, the C Kα emission spectra show the shape and peak energy characteristic of vanadium carbide including substrate 6H-SiC signal.
机译：碳化硅（SiC）是电子设备在关键环境下运行的候选材料。从器件性能的角度来看，金属/ SiC接触系统中形成的硅化物和/或碳化物/石墨的电子状态至关重要。我们研究了沉积在6H-SiC（0001）Si上的钒（V）薄膜的界面电子结构通过使用软X射线发射光谱（SXES）进行面部识别。对于在850℃退火的V（38 nm）/ 6H-SiC（衬底）接触系统的样品，Si L_（2,3）发射光谱表明衬底具有不同的形状和峰值能量。建议使用诸如硅化物和/或三元材料之类的产品。类似地，CKα发射光谱显示出包括衬底6H-SiC信号的碳化钒的形状和峰值能量特性。

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  • 来源
    《Applied Surface Science》 |2009年第4期|948-949|共2页
  • 作者

    M. Hirai; H. Okazaki; R. Yoshida; M. Tajima; K. Saeki; Y. Muraoka; T. Yokoya;

  • 作者单位

    Division of Frontier and Fundamental Sciences, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700-8530, Japan;

    Mathematics and Physics, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan;

    Mathematics and Physics, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan;

    Mathematics and Physics, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan;

    Mathematics and Physics, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan;

    Division of Frontier and Fundamental Sciences, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700-8530, Japan;

    Division of Frontier and Fundamental Sciences, Graduate School of Natural Science and Technology, Okayama University, Okayama 700-8530, Japan Research Laboratory for Surface Science, Faculty of Science, Okayama University, Okayama 700-8530, Japan;

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  • 正文语种 eng
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  • 关键词

    SXES; 6H-SiC; silicide; vanadium;

    机译：SXES;6H-SiC;硅化物钒;

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