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Surface morphology of GaN nanorods grown by catalyst-free hydride vapor phase epitaxy

机译：无催化剂氢化物气相外延生长GaN纳米棒的表面形貌

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摘要

GaN nanorods were grown on c-plane sapphire substrates by using catalyst-free hydride vapor phase epitaxy (HVPE). The effects of substrate temperature, Ga boat temperature, and Ga pretreatment on the surface morphology of GaN nanorods were investigated. From the dependence of a radial and axial growth rate on the substrate temperature, the kinetically limited process was found to be a rate determining step in the growth of GaN nanorods in HVPE. In addition, the activation energy of the growth along the both axial and radial directions were estimated. The dependence of a Ga boat temperature and the Ga pretreatment effect revealed that the density of nanorods were dependent on the flux of Ga species on the substrate.
机译：通过使用无催化剂的氢化物气相外延（HVPE），在c面蓝宝石衬底上生长GaN纳米棒。研究了衬底温度，Ga舟温度和Ga预处理对GaN纳米棒表面形貌的影响。根据径向和轴向生长速率对衬底温度的依赖性，发现动力学受限的过程是HVPE中GaN纳米棒生长的速率决定步骤。另外，估计了沿轴向和径向的生长的活化能。 Ga舟温度和Ga预处理效果的依赖关系表明，纳米棒的密度取决于衬底上Ga物种的通量。

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  • 来源
    《Applied Surface Science》 |2009年第4期|1078-1081|共4页
  • 作者

    Yuri Sohn; Chinkyo Kim;

  • 作者单位

    Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, 1 Hoegi-dong, Dongdaemun-gu, Seoul 130-701, Republic of Korea;

    Department of Physics and Research Institute of Basic Sciences, Kyung Hee University, 1 Hoegi-dong, Dongdaemun-gu, Seoul 130-701, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
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  • 关键词

    GaN; nanorods; hydride vapor phase epitaxy;

    机译：氮化镓;纳米棒氢化物气相外延;

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