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首页> 外文期刊>Applied Surface Science >The Influence Of Titanium On The Properties Of Zinc Oxide Films Deposited By Radio Frequency Magnetron Sputtering
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The Influence Of Titanium On The Properties Of Zinc Oxide Films Deposited By Radio Frequency Magnetron Sputtering

机译：钛对射频磁控溅射沉积氧化锌薄膜性能的影响

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摘要

TiO_2-doped zinc oxide thin films were deposited on glass substrates by radio frequency (RF) magnetron sputtering with TiO_2-doped ZnO targets in an argon atmosphere. The structural properties of TiO_2-doped ZnO films doped with different TiO_2 contents were investigated. The experimental results show that polycrystalline TiO_2-doped ZnO films had the (0 0 2) preferred orientation. The deposition parameters such as the working pressure and substrate temperature of TiO_2-doped ZnO films were also investigated. The crystalline structure of the TiO_2-doped ZnO films gradually improved as the working pressure was lowered and the substrate temperature was raised. The lowest electrical resistivity for the TiO_2-doped ZnO films was obtained when the Ti addition was 1.34 wt%; its value was 2.50 × 10~(-3) Ω cm, smaller than that found in previous studies. The transmittance of the TiO_2-doped ZnO films in the visible wavelength range was more than 80%. The optical energy gap was related to the carrier concentration, and was in the range of 3.30-3.48 eV.
机译：在氩气气氛中，通过掺有TiO_2的ZnO靶的射频（RF）磁控溅射，在玻璃基板上沉积TiO_2掺杂的ZnO薄膜。研究了掺杂不同TiO_2含量的TiO_2掺杂ZnO薄膜的结构性能。实验结果表明，掺杂多晶TiO_2的ZnO薄膜具有（0 0 2）择优取向。还研究了掺杂TiO_2的ZnO薄膜的沉积参数，如工作压力和衬底温度。随着工作压力的降低和衬底温度的升高，掺杂TiO_2的ZnO薄膜的晶体结构逐渐改善。当Ti的添加量为1.34wt％时，获得了掺杂TiO_2的ZnO薄膜的最低电阻率。其值为2.50×10〜（-3）Ωcm，比以前的研究结果小。 TiO_2掺杂的ZnO薄膜在可见光波长范围内的透射率大于80％。光能隙与载流子浓度有关，在3.30-3.48 eV范围内。

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