• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Applied Surface Science >Observing The Effect Of Water Vapor On Post-irradiated Surface Morphology Of Sio_2 And Si_3n_4 Insulators By Atomic Force Microscopy
【24h】

Observing The Effect Of Water Vapor On Post-irradiated Surface Morphology Of Sio_2 And Si_3n_4 Insulators By Atomic Force Microscopy

机译：原子力显微镜观察水蒸气对Sio_2和Si_3n_4绝缘子辐照后表面形貌的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this work, we investigated the effect of water-vapor treatment on the surface morphology of SiO_2 and Si_3N_4 insulators before and after Co~(60) gamma-ray irradiation by using the atomic force microscopy (AFM) operated under non-contact mode. Before irradiation, no apparent surface morphology change was found in SiO_2 samples even they were water vapor treated. However, bright spots were found on post-irradiated water-vapor-treated SiO_2 sample surfaces but not on those without water-vapor treatment. We attributed the bright spots to the negative charge accumulation in the oxide due to charge balancing between hydroxyl (OH~-) ions adsorbed on SiO_2 surface and electron-hole pairs (ehps) generated during irradiation since they can be annealed out after low temperature annealing process. On the contrary, no bright spots were observed on post-irradiated Si_3N_4 samples with and without water-vapor treatment. This result confirms that Si_3N_4 is a better water-resist passivation layer than SiO_2 layer.
机译：在这项工作中，我们通过在非接触模式下操作的原子力显微镜（AFM）研究了水蒸气处理对SiO_2和Si_3N_4绝缘子在Co〜（60）γ射线辐照之前和之后的表面形态的影响。辐照前，即使经过水蒸气处理，SiO_2样品中也没有发现明显的表面形态变化。但是，在经过水蒸气处理后的SiO_2样品表面经过辐照后，没有发现亮点，而在未经水蒸气处理的表面上却没有。我们将亮点归因于氧化物的负电荷积累，这是由于吸附在SiO_2表面的羟基（OH〜-）离子与辐射过程中产生的电子-空穴对（ehps）之间的电荷平衡造成的，因为它们可以在低温退火后退火处理。相反，在经过和未经过水蒸气处理的Si_3N_4辐照后的样品上均未观察到亮点。该结果证实Si_3N_4是比SiO_2层更好的耐水钝化层。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号