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首页> 外文期刊>Applied Surface Science >Local Field-emission Characteristic Of Individual Aln Cone Fabricated By Focused Ion-beam Etching Method
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Local Field-emission Characteristic Of Individual Aln Cone Fabricated By Focused Ion-beam Etching Method

机译：聚焦离子束刻蚀法制备单个Aln锥的局部场发射特性

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摘要

Highly (002)-oriented AlN film was deposited on n-type (100)-oriented silicon substrates by the radio frequency magnetron sputtering method. An individual AlN cone with high aspect ratio was fabricated by the focused ion-beam (FIB) etching process in the surface of an as-formed AlN film. This etching method can easily control the tip radius and height to obtain AlN cones with different aspect ratios. The field-emission property of the individual AlN cone was measured in a scanning electron microscopy system equipped with a movable probe as the anode above the AlN tip. The results indicated that the as-formed single AlN cone with high aspect ratio possessed good field-emission ability although it only had a tiny emission area. Compared with a single Si tip fabricated by the same method, a single AlN cone exhibits better field-emission ability, and hence, has great potential as a promising candidate of point electron source for application in vacuum electronic devices.
机译：通过射频磁控溅射方法在（n）（100）取向的硅衬底上沉积高度（002）取向的AlN膜。通过聚焦离子束（FIB）蚀刻工艺，在形成的AlN膜表面上制作出具有高深宽比的单个AlN锥。该蚀刻方法可以容易地控制尖端半径和高度以获得具有不同纵横比的AlN锥体。在配备有可移动探针作为AlN尖端上方的阳极的扫描电子显微镜系统中测量单个AlN锥的场发射特性。结果表明，高纵横比形貌的单AlN锥虽然发射面积很小，但具有良好的场发射能力。与通过相同方法制造的单个Si尖端相比，单个AlN圆锥体具有更好的场发射能力，因此，作为用于真空电子器件的点电子源的有希望的候选者，它具有很大的潜力。

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