Gadolinium Oxide High-k Gate Dielectrics Prepared By Anodic Oxidation

P.Y. Kuei; C.C. Hu

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Gadolinium Oxide High-k Gate Dielectrics Prepared By Anodic Oxidation

机译：阳极氧化法制备氧化d高k栅介质

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The growth and properties of gadolinium oxide (Gd_2O_3) films prepared by anodic oxidation were investigated. Uniform Gd_2O_3 thin film with good oxide quality was obtained. The X-ray diffraction (XRD) pattern of the Gd_2O_3 films showed that they had a poly-crystalline structure. The dielectric constants of Gd_2O_3 films oxidized at 30 and 60 V are 9.4 and 12.2, respectively. The equivalent oxide thickness (EOT) of the Gd_2O_3 stacked oxide is in the range of 5.8-9.4 nm. The MOS capacitor with Gd_2O_3 exhibits interesting electrical properties. Longer oxidation time reduced the leakage current density for 30 V anodic oxidation but increased the leakage current density for 60 V anodic oxidation. This work reveals that Gd_2O_3 could also be an alternative dielectric for Si substrate and therefore, might pave the way to fabricate CMOS devices in the future.

机译：研究了阳极氧化法制备的氧化oxide（Gd_2O_3）薄膜的生长和性能。获得具有良好氧化物质量的均匀的Gd_2O_3薄膜。 Gd_2O_3薄膜的X射线衍射（XRD）图谱显示它们具有多晶结构。在30和60 V氧化的Gd_2O_3薄膜的介电常数分别为9.4和12.2。 Gd_2O_3堆叠氧化物的等效氧化物厚度（EOT）在5.8-9.4 nm的范围内。具有Gd_2O_3的MOS电容器表现出令人感兴趣的电性能。更长的氧化时间降低了30 V阳极氧化的泄漏电流密度，但增加了60 V阳极氧化的泄漏电流密度。这项工作表明，Gd_2O_3也可以作为Si衬底的替代电介质，因此，将来可能为制造CMOS器件铺平道路。

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来源
《Applied Surface Science》 |2008年第17期|p.5487-5491|共5页
作者
P.Y. Kuei; C.C. Hu;
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作者单位

Department of Electrical and Electronic Engineering, Chung Cheng Institute of Technology, National Defense University, Tahsi, Taoyuan 335, Taiwan, ROC;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
gadolinium oxide; anodic oxidation; dielectric constant; equivalent oxide thickness;

机译：氧化oxide阳极氧化介电常数等效氧化层厚度;

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Gadolinium Oxide High-k Gate Dielectrics Prepared By Anodic Oxidation

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