Passivation Of Gaas Surface By Atomic-layer-deposited Titanium Nitride

M. Bosund; A. Aierken; J. Tiilikainen; T. Hakkarainen; H. Lipsanen

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Passivation Of Gaas Surface By Atomic-layer-deposited Titanium Nitride

机译：原子层沉积氮化钛钝化Gaas表面

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The suitability of titanium nitride (TiN) for GaAs surface passivation and protection is investigated. A 2-6-nm thick TiN passivation layer is deposited by atomic layer deposition (ALD) at 275 ℃ on top of InGaAs/ GaAs near surface quantum well (NSQW) structures to study the surface passivation. X-ray reflectivity measurements are used to determine the physical properties of the passivation layer. TiN passivation does not affect the surface morphology of the samples, but increases significantly the photoluminescence intensity and carrier lifetime of the NSQWs, and also provides long-term protection of the sample surface. This study shows that ALD TiN coating is a promising low-temperature method for ex situ GaAs surface passivation.

机译：研究了氮化钛（TiN）对GaAs表面钝化和保护的适用性。通过原子层沉积（ALD）在275℃的InGaAs / GaAs表面量子阱（NSQW）结构顶部沉积2-6 nm厚的TiN钝化层，以研究表面钝化。 X射线反射率测量用于确定钝化层的物理性质。 TiN钝化不会影响样品的表面形态，但会显着增加NSQW的光致发光强度和载流子寿命，并为样品表面提供长期保护。这项研究表明，ALD TiN涂层是用于非原位GaAs表面钝化的一种有前途的低温方法。

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来源
《Applied Surface Science》 |2008年第17期|p.5385-5389|共5页
作者
M. Bosund; A. Aierken; J. Tiilikainen; T. Hakkarainen; H. Lipsanen;
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作者单位

Micro and Nanosciences Laboratory, Helsinki University of Technology, P.O. Box 3500, FI-02015 TKK, Finland;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
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atomic layer deposition; gallium arsenide; photoluminescence; surface passivation; titanium nitride;

机译：原子层沉积;砷化镓;光致发光;表面钝化;氮化钛;

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1. GaAs surface passivation by plasma-enhanced atomic-layer-deposited aluminum nitride [J] . M. Bosund, P. Mattila, A. Aierken, Applied Surface Science . 2010,第24期

机译：等离子体增强原子层沉积氮化铝对砷化镓表面钝化
2. Nitride passivation reduces interfacial traps in atomic-layer-deposited Al_2O_3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition [J] . T. Aoki, N. Fukuhara, T. Osada, Applied Physics Letters . 2014,第3期

机译：氮化物钝化使用大气金属有机化学气相沉积减少了原子层沉积的Al_2O_3 / GaAs（001）金属氧化物半导体电容器中的界面陷阱
3. Nitride chemical passivation of a GaAs (100) Surface: Effect on the electrical characteristics of Au/GaAs surface-barrier structures [J] . Berkovits V.L., Lvova T.V., Ulin V.P. Semiconductors . 2011,第12期

机译：GaAs（100）表面的氮化物化学钝化：对Au / GaAs表面势垒结构电特性的影响
4. Thermal treatment effects on flat-band voltage shift in atomic-layer-deposited alumina or aluminum oxide/silicon nitride passivation stacks [C] . Supawan Joonwichien, Shalamujiang Simayi, Katsuhiko Shirasawa International Conference on Crystalline Silicon Photovoltaics . 2016

机译：热处理对原子层沉积氧化铝或氧化铝/氮化硅钝化堆叠的平频带电压变换
5. Nanostructural, surface morphological evolution, and physical properties of sodium chloride-structure titanium nitride and titanium cerium nitride layers as a function of composition. [D] . Lee, Tae-Yoon. 2004

机译：氯化钠结构的氮化钛和氮化钛铈层的纳米结构，表面形态演变和物理性能随成分的变化而变化。
6. Study of Optical Properties of Surface Layers Produced by Laser Surface Melting and Laser Surface Nitriding of Titanium Alloy [O] . Aleksander Lisiecki 2019

机译：钛合金激光表面熔化和激光表面氮化处理产生的表面层的光学性能研究
7. Thermal Treatment Effects on Flat-band Voltage Shift in Atomic-layer-deposited Alumina or Aluminum Oxide/Silicon Nitride Passivation Stacks [O] . Joonwichien Supawan, Simayi Shalamujiang, Shirasawa Katsuhiko, 2016

机译：热处理对原子层沉积氧化铝或氧化铝/氮化硅钝化叠层中平带电压偏移的影响

Passivation Of Gaas Surface By Atomic-layer-deposited Titanium Nitride

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