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Structural, Optical Properties And Band Gap Alignments Of Zro_xn_y Thin Films On Si (1 0 0) By Radio Frequency Sputtering At Different Deposition Temperatures

机译:在不同沉积温度下通过射频溅射在Si(1 0 0)上Zro_xn_y薄膜的结构,光学性质和带隙取向

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摘要

ZrO_xN_y thin films have been prepared by radio frequency magnetron sputtering at various substrate temperatures. The effect of substrate temperature on structural, optical properties and energy-band alignments of as-deposited ZrO_xN_ythin films are investigated. Atomic force microscopy results indicate the decreased root-mean-square (rms) values with substrate temperature. Fourier transform infrared spectroscopy spectra indicate that an interfacial layer has been formed between Si substrate and ZrO_xN_y thin films during deposition. X-ray photoelectron spectroscopy and spectroscopy ellipsometry (SE) results indicate the increased nitrogen incorporation in ZrO_xN_y thin films and therefore, the decreased optical band gap (E_g) values as a result of the increased valence-band maximum and lowered conduction-band minimum.
机译:ZrO_xN_y薄膜是通过在各种基板温度下进行射频磁控溅射制备的。研究了衬底温度对沉积的ZrO_xN_ythin薄膜的结构,光学性能和能带取向的影响。原子力显微镜结果表明,随着基材温度的降低,均方根值降低。傅立叶变换红外光谱表明,在沉积过程中,Si衬底与ZrO_xN_y薄膜之间已形成界面层。 X射线光电子能谱和椭圆偏振光谱(SE)结果表明ZrO_xN_y薄膜中氮的掺入增加,因此,价带最大增加和导带最小减小导致光带隙(E_g)值减小。

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