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The effect of rf power on the growth of InN films by modified activated reactive evaporation

机译：射频功率对改性活化反应蒸发法生长InN薄膜的影响

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摘要

We report the effect of rf power on the structural, optical and electrical properties of InN films grown by modified activated reactive evaporation. In this technique, the substrates were kept on the cathode instead of ground electrode. The films grown at higher rf power shows preferential c-axis orientations for both silicon and glass substrates. The films prepared at 100 W show best structural, electrical and optical properties. The c-axis lattice constant was found to decrease with increase in rf power which can be attributed to reduction in excess nitrogen in the films. The band gap decreases with increase in rf power due to Moss-Burstein shift. The decrease in carrier concentration and optical band gap with increase in rf power can also be related to excess nitrogen in the film. The Raman spectra shows a red shift in the A_1(LO) and E_2 (high) mode from the reported value. The possible origin of the present large band gap is due to Moss-Burstein shift. The new film growth method opens opportunities for integrating novel substrate materials with group III nitride technologies.
机译：我们报告了射频功率对通过改性活化反应蒸发生长的InN薄膜的结构，光学和电学性质的影响。在这种技术中，基板被保持在阴极上而不是接地电极上。以较高的射频功率生长的薄膜对于硅和玻璃基板均显示出优先的c轴取向。以100 W制备的薄膜显示出最佳的结构，电和光学性能。发现c轴晶格常数随着rf功率的增加而降低，这可以归因于膜中过量氮的减少。由于莫斯-伯斯坦位移，带隙随着射频功率的增加而减小。随着射频功率的增加，载流子浓度和光学带隙的减少也可能与薄膜中过量的氮有关。拉曼光谱显示在A_1（LO）和E_2（高）模式下与报告值发生红移。当前大带隙的可能起源是由于莫斯-伯斯坦位移。新的膜生长方法为将新型衬底材料与III族氮化物技术集成提供了机会。

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