The Optimization Of Incident Angles Of Low-energy Oxygen Ion Beams For Increasing Sputtering Rate On Silicon Samples

T. Sasaki; N. Yoshida; M. Takahashi; M. Tomita

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The Optimization Of Incident Angles Of Low-energy Oxygen Ion Beams For Increasing Sputtering Rate On Silicon Samples

机译：提高硅样品溅射速率的低能氧离子束入射角的优化

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In order to determine an appropriate incident angle of low-energy (350-eV) oxygen ion beam for achieving the highest sputtering rate without degradation of depth resolution in SIMS analysis, a delta-doped sample was analyzed with incident angles from 0° to 60° without oxygen bleeding. As a result, 45' incidence was found to be the best analytical condition, and it was confirmed that surface roughness did not occur on the sputtered surface at 100-nm depth by using AFM. By applying the optimized incident angle, sputtering rate becomes more than twice as high as that of the normal incident condition.

机译：为了确定合适的低能量（350-eV）氧离子束入射角以实现最高的溅射速率而不会降低SIMS分析中的深度分辨率，我们分析了入射角从0°到60°的掺sample样品°无氧气流血。结果，发现45'入射是最佳的分析条件，并且通过使用AFM证实了在100nm深度的溅射表面上没有出现表面粗糙度。通过应用最佳入射角，溅射速率将变为正常入射条件的两倍以上。

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来源
《Applied Surface Science》 |2008年第4期|p.1357-1359|共3页
作者
T. Sasaki; N. Yoshida; M. Takahashi; M. Tomita;
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作者单位

Analysis and Evaluation Center ll, Toshiba Nanoanalysis Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8583, Japan;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
low energy oxygen ion beam; incident angle; sputtering rate; delta-doped silicon sample; surface roughness; atomic force microscopy;

机译：低能氧离子束;入射角;溅射速率;掺silicon硅样品;表面粗糙度;原子力显微镜;

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1. Study of Boron Penetration through Gate Oxide Layer by SIMS under Optimized Incident Angle of Low-energy Oxygen Primary Ion Beam [J] . Yoshiya KAWASHIMA, Shin KOYAMA, Koichi ANDO 表面科学 . 2003,第7期

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2. Study of Boron Penetration through Gate Oxide Layer by SIMS under Optimized Incident Angle of Low-energy Oxygen Primary Ion Beam [J] . Yoshiya KAWASHIMA, Shin KOYAMA, Koichi ANDO 表面科学 . 2003,第7期

机译：低能量氧原色束透明入射角下SIMS通过栅极渗透层的研究
3. Nanopatterning of silicon surfaces by low-energy ion-beam sputtering: dependence on the angle of ion incidence [J] . R Gago, L Vazquez, R Cuerno Nanotechnology . 2002,第3期

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4. INCREASING THE CURRENT RISE RATE OF LOW-ENERGY, DENSE PULSED ELECTRON BEAMS [C] . Grigory E.Ozur, Vladimir A.Flegentov 17th International Conference on High-Power Particle Beams(第17届高功率离子束国际会议)论文集 . 2008

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5. Low-energy sputtering of Teflon by oxygen ion bombardment. [D] . Lamouri, Abbas. 1991

机译：通过氧离子轰击进行的低能聚四氟乙烯溅射。
6. Transition from ripples to faceted structures under low-energy argon ion bombardment of silicon: understanding the role of shadowing and sputtering [O] . Tanmoy Basu, Debi Prasad Datta, Tapobrata Som 2013

机译：在硅的低能氩离子轰击下从波纹到刻面结构的转变：了解阴影和溅射的作用
7. Study of Boron Penetration through Gate Oxide Layer by SIMS under Optimized Incident Angle of Low-energy Oxygen Primary Ion Beam [O] . Yoshiya KAWASHIMA, Shin KOYAMA, Koichi ANDO, 2003

机译：低能量氧原色束透明场膜氧化物层通过栅极渗透层的研究

The Optimization Of Incident Angles Of Low-energy Oxygen Ion Beams For Increasing Sputtering Rate On Silicon Samples

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