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Cobalt-induced polycrystalline silicon film growth

机译：钴诱导的多晶硅膜生长

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摘要

Cobalt (Co)-induced crystalline silicon (Si) growth was investigated. The Co catalyst reacted to dc magnetron sputtered Si at 600 ℃ forming a Co silicide layer. The polycrystalline Si (poly-Si) was epitaxially grown above the Co silicide template, which has a small lattice misfit to Si. Annealing followed to improve the Si crystallinity. X-ray diffraction was performed to trace Co silicide phase formation and transition. The Co-rich silicide phase transitioned to CoSi_2 by annealing. The crystallinity of Si films was identified using reflection absorption Fourier transform-infrared spectroscopy, which detected unique peaks at 689 and 566 cm~(-1) after the annealing process. The thin poly-Si film was used to fabricate a Schottky diode to prove the electronic quality. A good quality Si thin film was achieved by the metal-induced Si growth.
机译：研究了钴（Co）诱导的晶体硅（Si）生长。 Co催化剂在600℃与直流磁控溅射Si反应形成硅化Co层。在Co硅化物模板上方外延生长多晶Si（poly-Si），其对Si具有小的晶格失配。随后进行退火以提高Si的结晶度。进行X射线衍射以追踪Co硅化物相的形成和转变。富钴硅化物相通过退火转变为CoSi_2。用反射吸收傅里叶变换红外光谱法鉴定了硅膜的结晶度，退火后在689和566 cm〜（-1）处发现了唯一的峰。多晶硅薄膜用于制造肖特基二极管，以证明其电子质量。通过金属诱导的硅生长获得了高质量的硅薄膜。

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