Fabrication of Sb-doped p-type ZnO thin films by pulsed laser deposition

Xinhua Pan; Zhizhen Ye; Jiesheng Li; Xiuquan Gu; Yujia Zeng; Haiping He; Lining Zhu; Yong Che

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Fabrication of Sb-doped p-type ZnO thin films by pulsed laser deposition

机译：脉冲激光沉积制备掺Sb的p型ZnO薄膜

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p-Type ZnO thin films have been realized via monodoping antimony (Sb) acceptor by using pulsed laser deposition. The obtained films with the best electrical properties show a hole concentration in the order of 10~(18) cm~(-3) and resistivity in the range of 2-4 Ω cm. X-ray diffraction measurements revealed that all the films possessed a good crystallinity with (002)-preferred orientation. Guided by X-ray photoemission spectroscopy analysis and a model for large-sized-mismatched group-V dopant in ZnO, an Sb_(Zn)-2V_(Zn) complex is believed to be the most possible acceptor in the Sb-doped p-type ZnO thin films.

机译：已经通过使用脉冲激光沉积通过单掺杂锑（Sb）受体实现了p型ZnO薄膜。所获得的具有最佳电性能的膜显示出的空穴浓度在10〜（18）cm〜（-3）的数量级，电阻率在2-4Ωcm的范围内。 X射线衍射测量表明，所有薄膜都具有良好的结晶度，并具有（002）优先取向。在X射线光电子能谱分析和ZnO中大尺寸不匹配的V族掺杂剂模型的指导下，Sb_（Zn）-2V_（Zn）络合物被认为是掺Sb的p-中最可能的受体。型ZnO薄膜。

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来源
《Applied Surface Science》 |2007年第11期|5067-5069|共3页
作者
Xinhua Pan; Zhizhen Ye; Jiesheng Li; Xiuquan Gu; Yujia Zeng; Haiping He; Lining Zhu; Yong Che;
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作者单位

State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, PR China;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
ZnO; Sb-doped; pulsed laser deposition; X-ray photoemission spectroscopy;

机译：氧化锌;掺锑脉冲激光沉积X射线光发射光谱;

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1. Fabrication of Zr-N codoped p-type ZnO thin films by pulsed laser deposition [J] . H. Kim, A. Cepler, M. S. Osofsky, Applied Physics Letters . 2007,第20期

机译：脉冲激光沉积制备Zr-N共掺杂p型ZnO薄膜
2. Fabrication of p-type doped ZnO thin films using pulsed laser deposition [J] . Duclere JR, OHaire R, Meaney A, Journal of Materials Science. Materials in Electronics . 2005,第7期

机译：使用脉冲激光沉积制备p型掺杂ZnO薄膜
3. Characteristics of undoped and Sb-doped ZnO thin films prepared in different atmospheres by pulsed laser deposition [J] . B. L Zhu, S. J. Zhu, X. Z. Zhao, Physica status solidi . 2011,第4期

机译：脉冲激光沉积在不同气氛下制备的未掺杂和掺Sb的ZnO薄膜的特性
4. p-Type Sb-doped ZnO Thin Films Prepared with Filtered Vacuum Arc Deposition [C] . T. David, S. Goldsmith, R.L. Boxman Society of Vacuum Coaters Annual Technical Conference; 20040424-29; Dallas,TX(US) . 2004

机译：过滤真空电弧沉积制备的p型掺杂Sb的ZnO薄膜
5. Development of ZnO-based thin film transistors and phosphorus-doped ZnO and (Zn, Mg)O by pulsed laser deposition. [D] . Li, Yuanjie. 2006

机译：通过脉冲激光沉积开发基于ZnO的薄膜晶体管和掺磷的ZnO和（Zn，Mg）O。
6. Fabrication of Y2O3-Doped Zirconia/Gadolinia-Doped Ceria Bilayer Electrolyte Thin Film SOFC Cells of SOFCs by Single-Pulsed Laser Deposition Processing [O] . T. Mukai, S. Tsukui, K. Yoshida, -1

机译：通过单脉冲激光沉积工艺制备Y2O3掺杂氧化锆/氧化G二氧化铈双层电解质薄膜SOFC的SOFC电池。
7. Fabrication and magneto-transport properties of p-type Bi0.5Sb1.5Te3 thin films on glass by pulsed laser deposition [O] . Yu, Zhenwei, Wang, Xiaolin, Du, Yi, 2012

机译：脉冲激光沉积在玻璃上制备p型Bi0.5Sb1.5Te3薄膜及其磁传输性能

Fabrication of Sb-doped p-type ZnO thin films by pulsed laser deposition

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