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首页> 外文期刊>Applied Surface Science >Dependence of the microstructural properties on the substrate temperature in strained CdTe (1 0 0)/GaAs (1 0 0) heterostructures
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Dependence of the microstructural properties on the substrate temperature in strained CdTe (1 0 0)/GaAs (1 0 0) heterostructures

机译：应变CdTe（1 0 0）/ GaAs（1 0 0）异质结构中微观结构性质对衬底温度的依赖性

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摘要

CdTe thin films were grown on GaAs (1 0 0) substrates by using molecular beam epitaxy at various temperatures. The bright-field transmission electron microscopy (TEM) images and the high-resolution TEM (HRTEM) images showed that the crystallinity of CdTe epilayers grown on GaAs substrates was improved by increasing the substrate temperature. The result of selected-area electron diffraction pattern (SADP) showed that the orientation of the grown CdTe thin films was the (1 0 0) orientation. The lattice constant the strain, and the stress of the CdTe thin film grown on the GaAs substrate were determined from the SADP result. Based on the SADP and HRTEM results, a possible atomic arrangement for the CdTe/GaAs heterostructure is presented.
机译：通过在各种温度下使用分子束外延，在GaAs（1 0 0）衬底上生长CdTe薄膜。亮场透射电子显微镜（TEM）图像和高分辨率TEM（HRTEM）图像显示，通过提高衬底温度可以改善在GaAs衬底上生长的CdTe外延层的结晶度。选择区域电子衍射图（SADP）的结果表明，生长的CdTe薄膜的取向为（1 0 0）取向。由SADP结果确定晶格常数，应变和在GaAs衬底上生长的CdTe薄膜的应力。基于SADP和HRTEM结果，提出了CdTe / GaAs异质结构的可能原子排列。

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