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首页> 外文期刊>Electronics Letters >High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures
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High power, singlemode InGaAs-GaAs-AlGaAs strained quantum well lasers with new current blocking scheme using GaAs layers grown by MBE at low substrate temperatures

机译：高功率，单模InGaAs-GaAs-AlGaAs应变量子阱激光器，采用新的电流阻挡方案，使用MBE在低衬底温度下生长的GaAs层

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摘要

Device results from laser diodes with a new current blocking scheme using low temperature (LT) GaAs grown by MBE at 200 degrees C are reported. The laser structure is grown by metal organic vapour phase epitaxy on channelled MBE-grown LT-GaAs. The LT-GaAs is shown to be effective in preserving the current blocking properties for InGaAs-GaAs-AlGaAs strained quantum well lasers. The CW laser threshold is 50 mA at RT (with a lasing wavelength of 980 nm) and far field patterns show fundamental modes (both lateral and transverse modes) even at an output power of 55 mW (per facet, uncoated). FWHMs of far field patterns parallel and perpendicular to the junction plane are 16 and 39 degrees at an output power of 55 mW, respectively.
机译：据报道，采用新的电流阻断方案的激光二极管使用MBE在200摄氏度下生长的低温（LT）GaAs产生了器件结果。通过在通道MBE生长的LT-GaAs上通过金属有机气相外延生长激光结构。 LT-GaAs被证明对于保留InGaAs-GaAs-AlGaAs应变量子阱激光器的电流阻挡特性有效。 CW激光阈值在RT下（激光波长为980 nm）为50 mA，远场图显示出基本模式（横向和横向模式），即使在输出功率为55 mW（每面，未镀膜）时也是如此。在55 mW的输出功率下，平行和垂直于结平面的远场图形的FWHM分别为16度和39度。

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