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首页> 外文期刊>IEEE Transactions on Electron Devices >Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy
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Strained-layer InGaAs-GaAs-AlGaAs graded-index separate-confinement single quantum well lasers grown by molecular-beam epitaxy

机译：分子束外延生长的应变层InGaAs-GaAs-AlGaAs梯度折射率分离约束单量子阱激光器

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摘要

Strained-layer Ga/sub 0.7/In/sub 0.3/As-AlGaAs-GaAs graded-index separate-confinement heterostructure single-quantum-well lasers were grown by molecular-beam epitaxy with growth conditions selected to optimize the growth of each material. The lasers emit at a wavelength of 1.03 mu m at 300 K, have threshold currents of 12 mA for 3 mu m*400 mu m devices, and have average threshold current densities of 174 A/cm/sup 2/ for 40 mu m*800 mu m devices. Studies of threshold current versus cavity length and width agree with theoretical formulations. The threshold currents for lasers of various lengths and widths are significantly lower than those for previous strained-layer lasers grown by molecular-beam epitaxy and lower than those for strained-layer lasers grown by organometallic vapor-phase epitaxy. Although these devices have not been optimized for microwave modulation, 4-GHz bandwidths have been measured for 21.5 mu m*600 mu m devices.
机译：通过分子束外延生长应变层Ga / sub 0.7 / In / sub 0.3 / As-AlGaAs-GaAs渐变折射率分离约束异质结构单量子阱激光器，并选择生长条件以优化每种材料的生长。激光器以300 K的波长发射1.03μm的波长，对于3μm* 400μm的器件，阈值电流为12 mA，对于40μm*的平均阈值电流密度为174 A / cm / sup 2 / 800微米的设备。阈值电流对腔体长度和宽度的研究与理论公式一致。各种长度和宽度的激光器的阈值电流明显低于以前通过分子束外延生长的应变层激光器的阈值电流，并且低于通过有机金属气相外延生长的应变层激光器的阈值电流。尽管这些设备尚未针对微波调制进行优化，但已针对21.5μm* 600μm的设备测量了4 GHz带宽。

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