Growth Of Ultra-thin Cerium Oxide Layers On Cu(111)

V. Matolin; J. Libra; I. Matolinova; V. Nehasil; L. Sedlacek; F. Sutara

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Growth Of Ultra-thin Cerium Oxide Layers On Cu(111)

机译：Cu（111）上超薄氧化铈层的生长

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The reactive vacuum deposition of CeO_2 on Cu(111) surface in oxygen atmosphere provides high quality epitaxial ceria overlayers. We report the growth characteristics of Ce oxide, the structures, and the temperature stability of the oxide phases as investigated by low-energy electron diffraction (LEED) and X-ray photoelectron spectroscopy. We find that Ce oxide on the Cu(111) grows initially in the form of islands giving sharp hexagonal LEED pattern of the CeO_2(111) structure corresponding to the (1.5 × 1.5) structure. The CeO_2-Cu(111) films exhibited mixed valence states and temperature dependent CeO_2-Ce_2O_3 transition above 900 K due to the vacuum annealing. The transition progressed more rapidly at the surface, probably by formation of oxygen vacancies.

机译：CeO_2的反应真空沉积在氧气气氛中的Cu（111）表面上提供了高质量的外延氧化铈覆盖层。我们报告了铈氧化物的生长特性，氧化物相的结构和温度稳定性，这是通过低能电子衍射（LEED）和X射线光电子能谱研究的。我们发现，Cu（111）上的Ce氧化物最初以岛的形式生长，从而给出了与（1.5×1.5）结构相对应的CeO_2（111）结构的尖锐六边形LEED模式。由于真空退火，CeO_2-Cu（111）薄膜在900 K以上具有混合价态和与温度有关的CeO_2-Ce_2O_3转变。过渡过程可能是通过形成氧空位在表面进行得更快。

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来源
《Applied Surface Science》 |2007年第1期|p.153-155|共3页
作者
V. Matolin; J. Libra; I. Matolinova; V. Nehasil; L. Sedlacek; F. Sutara;
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作者单位

Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holesovickach 2, 18000 Prague 8, Czech Republic;

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原文格式 PDF
正文语种 eng
中图分类应用物理学;
关键词
photoelectron spectroscopy; leed; copper; cerium oxide; epitaxy; thin film;

机译：光电子能谱;铅;铜;氧化铈;外延;薄膜;

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Growth Of Ultra-thin Cerium Oxide Layers On Cu(111)

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