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首页> 外文期刊>Applied Surface Science >Ellipsometric investigation of optical constant and energy band gap of Zn1-xMnxSe/GaAs (100) epilayers
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Ellipsometric investigation of optical constant and energy band gap of Zn1-xMnxSe/GaAs (100) epilayers

机译：椭圆光度法研究Zn1-xMnxSe / GaAs（100）外延层的光学常数和能带隙

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Zn1-xMnxSe/GaAs (100) epilayers were grown using a hot-wall epitaxy method. The spectroscopic ellipsometry was used to determine the optical dielectric constant. The obtained pseudodielectric function spectra revealed the distinct structures at energies of E-0, E-0 + Delta(0), E-1, E-1 + Delta(1), E-2 and E-0(') + Delta(0) critical points (CPs) at lower Mn composition range. These critical points were determined by analytical line-shapes fitted to numerically calculated derivatives of their pseudodielectric functions. The peak characteristics were changed with the change in Mn composition. The spectral dependence of pseudodielectric function was used to obtain the fundamental energy gaps E-0 including a unique relation with Mn composition. Also, the shifting and broadening of the CPs were observed with increasing Mn composition. (c) 2005 Elsevier B.V. All rights reserved.
机译：使用热壁外延方法生长Zn1-xMnxSe / GaAs（100）外延层。椭圆偏振光谱法用于确定光学介电常数。所获得的伪介电函数谱揭示了在E-0，E-0 + Delta（0），E-1，E-1 + Delta（1），E-2和E-0（'）+ Delta能量下的独特结构（0）Mn含量较低的临界点（CPs）。这些临界点由适合其伪介电函数的数值计算导数的分析线形确定。峰特性随Mn组成的变化而变化。使用伪介电函数“ε”的光谱依赖性来获得基本能隙E-0，该能隙包括与Mn组成的唯一关系。同样，随着锰组成的增加，CP的位移和展宽也被观察到。 （c）2005 Elsevier B.V.保留所有权利。

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