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首页> 外文期刊>Applied Surface Science >Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory
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Effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 films for phase change random access memory

机译：Si掺杂对Ge2Sb2Te5相变随机存取存储器薄膜结构和电学性能的影响

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摘要

The effects of Si doping on the structural and electrical properties of Ge2Sb2Te5 film are studied in detail. Electrical properties and thermal stability can be improved by doping small amount of Si in the Ge2Sb2Te5 film. The addition of Si in the Ge2Sb2Te5 film results in the increase of both crystallization temperature and phase-transition temperature from face-centered cubic (fee) phase to hexagonal (hex) phase, however, decreases the melting point slightly. The crystallization activation energy reaches a maximum at 4.1 at.% and then decreases with increasing dopant concentration. The electrical conduction activation energy increases with the dopant concentration, which may be attributed to the increase of strong covalent bonds in the film. The resistivity of Ge2Sb2Te5 film shows a significant increase with Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 T annealing increases from I to 11 m Omega cm compared to the undoped Ge2Sb2Te5 film-Current-voltage (I-V) characteristics show Si doping may increase the dynamic resistance, which is helpful to writing current reduction of phase-change random access memory. (c) 2005 Elsevier B.V. All rights reserved.
机译：详细研究了Si掺杂对Ge2Sb2Te5薄膜结构和电学性能的影响。通过在Ge2Sb2Te5膜中掺杂少量Si可以改善电性能和热稳定性。在Ge2Sb2Te5膜中添加Si会导致结晶温度和相变温度从面心立方（Fee）相转变为六方（hex）相，但熔点略有降低。结晶活化能在4.1原子％处达到最大值，然后随掺杂剂浓度的增加而降低。导电活化能随掺杂剂浓度的增加而增加，这可能归因于薄膜中强共价键的增加。 Ge2Sb2Te5薄膜的电阻率随Si掺杂而显着增加。当在薄膜中掺杂11.8 at。％的Si时，与未掺杂的Ge2Sb2Te5薄膜相比，460 T退火后的电阻率从I增加到11 m Omega cm。电流-电压（IV）特性表明Si掺杂可以增加动态电阻，这有助于减少相变随机存取存储器的电流。 （c）2005 Elsevier B.V.保留所有权利。

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