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GaN epilayers on nanopatterned GaN/Si(111) templates: Structural and optical characterization

机译：纳米图案GaN / Si（111）模板上的GaN外延层：结构和光学表征

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Template-based nanoscale epitaxy has been explored to realize high-quality GaN on Si(I 1 1) substrates. We have employed polystyrene-based nanosphere lithography to form the nano-hole array patterns on GaN/Si(1 1 1) template and then, subsequent regrowth of GaN is carried out by metalorganic chemical vapor deposition (MOCVD). During the initial growth stage of GaN on such nanopatterned substrates, we have observed formation of nanoislands with hexagonal pyramid shape due to selective area epitaxy. With further epitaxial regrowth, these nanoislands coalesce and form continuous GaN film. The overgrown GaN on patterned and non-patterned regions is characterized by high-resolution X-ray diffraction (HRXRD) and high-spatial resolution optical spectroscopic methods. Micro-photoluminescence (PL), micro-Raman scattering and scanning electron microscopy (SEM) have been used to assess the microstructural and optical properties of GaN. Combined PL and Raman data analyses show improved optical quality when compared to GaN simultaneously grown on non-patterned bulk Si(l 1 1). Such thicker GaN templates would be useful to achieve III-nitride-based opto- and electronic devices integrated on Si substrates. (c) 2006 Elsevier B.V. All rights reserved.
机译：已经探索了基于模板的纳米外延技术，以在Si（I 1 1）衬底上实现高质量的GaN。我们已经采用基于聚苯乙烯的纳米球光刻技术在GaN / Si（1 1 1）模板上形成纳米孔阵列图案，然后通过金属有机化学气相沉积（MOCVD）进行GaN的再生。在此类纳米图案化衬底上的GaN初始生长阶段，我们观察到由于选择性区域外延而形成具有六棱锥形状的纳米岛。随着进一步的外延生长，这些纳米岛聚结并形成连续的GaN膜。图案化和非图案化区域上生长过度的GaN的特征在于高分辨率X射线衍射（HRXRD）和高空间分辨率光学光谱法。显微光致发光（PL），显微拉曼散射和扫描电子显微镜（SEM）已用于评估GaN的微观结构和光学性质。与同时在无图案块状Si（11）上生长的GaN相比，PL和拉曼数据组合分析显示出更高的光学质量。这种较厚的GaN模板将有助于实现集成在Si衬底上的基于III族氮化物的光电器件。 （c）2006 Elsevier B.V.保留所有权利。

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