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首页> 外文期刊>Applied Surface Science >Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure: A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wells
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Photoreflectance spectroscopy of semiconductor structures at hydrostatic pressure: A comparison of GaInAs/GaAs and GaInNAs/GaAs single quantum wells

机译：静水压力下半导体结构的光反射光谱：GaInAs / GaAs与GaInNAs / GaAs单量子阱的比较

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The pressure dependence of optical transitions in Ga0.64In0.36As/GaAs and Ga0.64In0.36N0.0As0.99/GaAs single quantum well (SQW) structures were studied in photoreflectance (PR) spectroscopy. In order to apply high hydrostatic pressure, up to similar to 11 kbar, the liquid-filled clamp-pressure cell with a sapphire window for optical access has been adopted in the PR set-up with the so called 'bright configuration'. It has been found that the linear hydrostatic pressure coefficient for the ground state transition are equal to 8.6 and 7.3 meV/kbar for the GaInAs/GaAs and GaInNAs/GaAs SQWs, respectively. This result shows that the incorporation of only 1% of N atoms into GaInAs/GaAs leads to similar to 15% decrease in the pressure coefficient. In addition, a non-linearity in the pressure dependence of the ground state transition has been resolved for the GaInNAs/GaAs SQW. (c) 2006 Elsevier B.V. All rights reserved.
机译：在光反射（PR）光谱中研究了Ga0.64In0.36As / GaAs和Ga0.64In0.36N0.0As0.99 / GaAs单量子阱（SQW）结构中光学跃迁的压力依赖性。为了施加高达11 kbar的高静水压力，在PR装置中采用了带有蓝宝石窗口以进行光学访问的充满液体的夹紧压力传感器，即所谓的“明亮配置”。已经发现，对于GaInAs / GaAs和GaInNAs / GaAs SQWs，基态转变的线性静水压力系数分别等于8.6和7.3meV / kbar。该结果表明，仅1％的N原子掺入GaInAs / GaAs中导致压力系数降低约15％。另外，对于GaInNAs / GaAs SQW，已经解决了基态转变的压力依赖性的非线性问题。 （c）2006 Elsevier B.V.保留所有权利。

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