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首页> 外文期刊>Applied Surface Science >Intrinsic coercivities of molecular beam epitaxy grown single-crystal Ni films on Ag buffer layer
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Intrinsic coercivities of molecular beam epitaxy grown single-crystal Ni films on Ag buffer layer

机译：Ag缓冲层上分子束外延生长单晶Ni膜的固有矫顽力

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Single-crystal Ni films were made by the molecular beam epitaxy (MBE) method on Si(100) and Si(110) substrates, respectively, with an 100 angstrom thick Ag buffer layer. The growth temperature T-s was 270 degrees C, and the film thickness t was 500 A. From reflection high-energy electron diffraction (RHEED) patterns, the crystalline symmetries of the two films are clear and as expected. Intrinsic coercivities, H-C(I 0 0) and H-C(110), are plotted as a function of the angle of rotation (P around the crystal axes [100] and [110], respectively. The results show that both H-C(100) and H-C(110) exhibit mixed features of the crystalline (K-C) and the induced uniaxial magnetic (K-u) anisotropies. K-u is the magneto-elastic energy, due to lattice mismatch at the Ni/Ag interface. Moreover, the crystalline anisotropy fields, H-K(100) and H-K(110), and the induced anisotropy filed, H-u, can be calculated as a funtion of phi, respectively. Then, each H-C curve is fitted by the equation: Hc = H-o + H-K + H-u, where H-o is the isotropic pinning field. Meanwhile, domain structures were examined by the Bitter method, using Ferrofluid 707. On the Ni(100) film, we observed the charged cross-tie walls, and on the Ni(100) film, the un-charged Bloch walls. (c) 2005 Elsevier B.V. All rights reserved.
机译：通过分子束外延（MBE）方法分别在具有100埃厚的Ag缓冲层的Si（100）和Si（110）衬底上制备单晶Ni膜。生长温度T-s为270℃，膜厚度t为500A。从反射高能电子衍射（RHEED）图案，两层膜的晶体对称性清晰且如预期。固有矫顽力HC（I 0 0）和HC（110）作为旋转角的函数（分别围绕晶轴[100]和[110]的P绘制），结果表明，两者HC（100） HC（110）和HC（110）表现出晶体（KC）和诱导的单轴磁（Ku）各向异性的混合特征； Ku是磁弹性能，归因于Ni / Ag界面处的晶格失配。 HK（100）和HK（110）以及诱导的各向异性场Hu可以分别作为phi的函数进行计算，然后，每个HC曲线均由以下公式拟合：Hc = Ho + HK + Hu，其中Ho是各向同性的钉扎场，同时，采用Ferrofluid 707的Bitter方法检测了畴结构。 （c）2005 Elsevier BV保留所有权利。

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